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DTC144TKA PDF预览

DTC144TKA

更新时间： 2024-11-29 06:54:51
品牌 Logo 应用领域
RECTRON 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 415K
描述
SOT-23-3L DIGITAL TRANSISTORS TRANSISTORS (NPN)

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中文翻译

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DTC144TKA 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：5.08Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：100JESD-30 代码：R-PDSO-G3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：265
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

DTC144TKA 数据手册

 浏览型号DTC144TKA的Datasheet PDF文件第2页浏览型号DTC144TKA的Datasheet PDF文件第3页 
DTC144TKA  
SOT-23-3L DIGITAL TRANSISTORS  
TRANSISTORS (NPN)  
FEATURES  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.(see equi-  
valent circuit).  
*
The bias resistors consist of thin-film resistors with co-  
mplete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely El-  
iminating parasitic effects.  
*
SOT-23-3L  
Only the on/off conditions need to be set for operation mark-  
ing device design easy.  
*
MECHANICAL DATA  
* Case: Molded plastic  
(1)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
(3)  
(2)  
* Weight: 0.009 gram  
(
)
)
.067 1.70  
(
)
f .028 0.70  
(
.059 1.50  
(
)
0.116 2.95  
0.104(2.65)  
R.002  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(
)
.05  
Ratings at 25OC ambient temperature unless otherwise specified.  
(
)
)
.049 1.25  
(
.041 1.05  
(2)  
(1)  
(
)
)
.004 0.10  
(1) Base  
(
.000 0.00  
(2) Emitter  
(3) Collector  
Dimensions in inches and (millimeters)  
(3)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
Collector-Base Voltage  
SYMBOL  
VALUE  
UNITS  
V
V
CBO  
V
CEO  
50  
50  
5
Collector-Emitter Voltage  
V
V
V
Emitter-base Voltage  
EBO  
Collector Continuous Current  
I
100  
mA  
C
Collector Dissipation  
PC  
200  
150  
mW  
oC  
Junction Temperature  
TJ  
oC  
-55 to +150  
Junction and storage Temperature  
TJ  
,TSTG  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS SYMBOL  
Collector-base breakdown voltage (I =50uA,I =0)  
MIN.  
50  
TYP.  
-
MAX.  
-
UNITS  
V
V
V
C
E
(BR)CBO  
Collector-emitter breakdown voltage (I =1mA,I =0)  
50  
5
-
-
-
-
V
V
C
B
(BR)CEO  
Emitter-base breakdown voltage (I =50uA,I =0)  
V
(BR)EBO  
E
C
Collector cut-off current (V =50V,I =0)  
I
-
-
0.5  
0.5  
600  
0.3  
mA  
mA  
CB  
E
CBO  
Emitter cut-off current (V =4V,I =0)  
I
-
100  
-
-
300  
-
EB  
C
EBO  
DC current gain (V =5V,I =1mA)  
h
CE  
C
FE  
Collector-emitter saturation voltage (I =5mA,I =0.5mA)  
V
CE(sat)  
V
C
B
Transition frequency (V =10V,I = -5mA,f=100MHz)  
f
-
250  
47  
-
MHz  
KΩ  
CE  
C
T
R1  
Input resistor  
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
32.9  
61.1  
2006-3  
123

中文翻译

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