Datasheet > DTC144TCA_09

DTC144TCA_09

更新时间： 2024-11-29 12:49:59

品牌	Logo	应用领域
美微科 - MCC		晶体数字晶体管
页数	文件大小	规格书
3页	117K
描述
NPN Digital Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DTC144TCA_09 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

DTC144TCA

Micro Commercial Components

Features

xꢀ Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

xꢀ The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

xꢀ Only the on/off conditions need to be set for operation, making

device design easy

NPN Digital Transistor

SOT-23

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

Symbol

V_CBO

Value

Unit

1. Base

2. Emitter

3. Collector

Collector-Emitter Voltage

Emitter-Base voltage

V_CEO

V_EBO

Collector Current-Continuous

I_C

100

Collector Dissipation

P_C

200

Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55~150

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0 and MSL Rating 1

DIMENSIONS

Electrical Characteristics

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

Sym

Parameter

Collector-Base Breakdown Voltage

(I_C=50uA, I_E=0)

Min

Typ

Max Unit

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

V_(BR)CBO

---

Collector-Emitter Breakdown Voltage

(I_C=1mA, I_B=0)

V_(BR)CEO

V_(BR)EBO

I_CBO

---

Emitter-Base Breakdown Voltage

(I_E=50uA, I_C=0)

.100

1.12

.180

.51

---

Collector Cut-off Current

(V_CB=50V, I_E=0)

.085

.37

---

0.5

Emitter Cut-off Current

(V_EB=4V, I_C=0)

I_EBO

---

0.5

---

Suggested Solder

Pad Layout

DC Current Gain

(V_CE=5V, I_C=1mA)

h_FE

100

300

600

.031

.800

Collector-Emitter Saturation Voltage

(I_C=10mA, I_B=1mA)

V_CE(sat)

R₁

---

32.9

---

0.3

61.1

---

.035

.900

Input resistance

Transition Frequency

(V_CE=10V, I_C=-5mA, f=100MHz)

MHz

f_T

250

.079

2.000

inches

*Marking: 06

.037

.950

.037

.950

www.mccsemi.com

1 of 3

Revision: 3

2009/02/11

12 3

中文翻译

下载PDF

与DTC144TCA_09相关器件

型号	品牌	获取价格	描述	数据表
DTC144TCA_11	MCC	获取价格	NPN Digital Transistor
DTC144TCAP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
DTC144TCAT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL
DTC144TCAT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL
DTC144TCAT216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
DTC144TCA-TP	MCC	获取价格	NPN Digital Transistor
DTC144TCA-TP-HF	MCC	获取价格	暂无描述
DTC144TE	CJ	获取价格	Digital transistors (built-in resistors)
DTC144TE	SECOS	获取价格	NPN Digital Transistors (Elektronische Bauelemente Built-in Resistors)
DTC144TE	TSC	获取价格	NPN Small Signal Transistor

与DTC144TCA_09相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

51
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

DTC144TCA_09

DTC144TCA_09 数据手册

与DTC144TCA_09相关器件

与DTC144TCA_09相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DTC144TCA_09

DTC144TCA_09 数据手册

与DTC144TCA_09相关器件

与DTC144TCA_09相关文章

您还可以找

您在本页遇到什么问题？