Datasheet > DTC144TCA_11

DTC144TCA_11

更新时间： 2024-11-29 09:58:23

品牌	Logo	应用领域
美微科 - MCC		晶体数字晶体管
页数	文件大小	规格书
3页	200K
描述
NPN Digital Transistor

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中文翻译

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DTC144TCA_11 数据手册

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

DTC144TCA

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN Digital Transistor

xꢀ Built-in bias resistors enable the configuration of an inverter circuit

without connecting external input resistors (see equivalent circuit)

xꢀ The bias resistors consist of thin-film resistors with complete

isolation to allow negative biasing of the input. They also have the

advantage of almost completely eliminating parasitic effects

xꢀ Only the on/off conditions need to be set for operation, making

device design easy

SOT-23

1. Base

2. Emitter

3. Collector

Absolute Maximum Ratings

Parameter

Collector-Base Voltage

Symbol

V_CBO

Value

Unit

Collector-Emitter Voltage

Emitter-Base voltage

V_CEO

V_EBO

Collector Current-Continuous

I_C

100

Collector Dissipation

P_C

200

Junction Temperature

T_J

150

Storage Temperature Range

T_STG

-55~150

DIMENSIONS

Electrical Characteristics

INCHES

MIN

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

Sym

Parameter

Collector-Base Breakdown Voltage

(I_C=50uA, I_E=0)

Min

Typ

Max Unit

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

V_(BR)CBO

---

Collector-Emitter Breakdown Voltage

(I_C=1mA, I_B=0)

V_(BR)CEO

V_(BR)EBO

I_CBO

---

Emitter-Base Breakdown Voltage

(I_E=50uA, I_C=0)

---

Collector Cut-off Current

(V_CB=50V, I_E=0)

.085

.37

---

0.5

Emitter Cut-off Current

(V_EB=4V, I_C=0)

I_EBO

---

0.5

---

Suggested Solder

Pad Layout

DC Current Gain

(V_CE=5V, I_C=1mA)

h_FE

100

300

600

.031

.800

Collector-Emitter Saturation Voltage

(I_C=10mA, I_B=1mA)

V_CE(sat)

R₁

---

32.9

---

0.3

61.1

---

.035

.900

Input resistance

Transition Frequency

(V_CE=10V, I_C=-5mA, f=100MHz)

MHz

f_T

250

.079

2.000

inches

*Marking: 06

.037

.950

.037

.950

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

中文翻译

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与DTC144TCA_11相关器件

型号	品牌	获取价格	描述	数据表
DTC144TCAP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
DTC144TCAT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL
DTC144TCAT117	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL
DTC144TCAT216	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
DTC144TCA-TP	MCC	获取价格	NPN Digital Transistor
DTC144TCA-TP-HF	MCC	获取价格	暂无描述
DTC144TE	CJ	获取价格	Digital transistors (built-in resistors)
DTC144TE	SECOS	获取价格	NPN Digital Transistors (Elektronische Bauelemente Built-in Resistors)
DTC144TE	TSC	获取价格	NPN Small Signal Transistor
DTC144TE	MCC	获取价格	NPN Digital Transistor

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