Datasheet > DTA114EE

DTA114EE

更新时间： 2024-11-18 06:54:47

品牌	Logo	应用领域
科信 - KEXIN		晶体数字晶体管开关光电二极管
页数	文件大小	规格书
3页	178K
描述
Digital Transistors

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中文翻译

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数据手册

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DTA114EE 数据手册

SMD Type

Transistors

Digital Transistors

DTA114EE

Features

PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)

Built-In Bias Resistors Enable The Configuration of An Inverter

Circuit Without Connecting External Input Resistors

(See Equivalent Circuit).

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CC

V^IN

Rating

-50

Unit

Supply Voltage

Input Voltage

-40 to +10

-50

I^O

Output Current

I^C(Max)

P^D

-100

Power Dissipation

150

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

VCC = -5V , IO = -100

VO = -0.3V , IO = -10mA

Min

-3

Typ

Max

-0.5

Unit

V^I(off)

V^I(on)

Input Voltage

Output Voltage

V^O(on)IO/II = -10mA/-0.5mA

-0.3

Input Current

I^I

I^O(off)

G^I

VI = -5V

-0.88 mA

Output Current

VCC = -50V , VI = 0V

VO = -5V , IO = -5mA

-0.5

DC Current Gain

Input Resistance

R¹

Resistance Ratio

R2/R1

f^T*

0.8

1.2

Transistion Frequency

* Characteristics of built-in transistor

VCE = -10V , IE = 5mA , f = 100MHz

250

MHz

Marking

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