Datasheet > DTA114EEB_09

DTA114EEB_09

更新时间： 2024-11-21 06:54:47

品牌	Logo	应用领域
罗姆 - ROHM		晶体电阻器数字晶体管
页数	文件大小	规格书
3页	153K
描述
100mA / 50V Digital transistors (with built-in resistors)

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中文翻译

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数据手册

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DTA114EEB_09 数据手册

100mA / 50V Digital transistors

(with built-in resistors)

DTA114EEB

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

EMT3F

1.6

0.7

0.26

(3)

zFeatures

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

(1)

0.5 0.5

1.0

(2)

0.13

(1) IN

(2) GND

(3) OUT

Each lead has same dimensions

Abbreviated symbol : 14

zStructure

zInner circuit

PNP silicon epitaxial planar transistor type

(Resistor built-in)

OUT

zPackaging specifications

GND(+)

Package

EMT3F

Taping

Packaging type

Code

OUT

Part No.

Basic ordering unit (pieces)

3000

GND(+)

DTA114EEB

=10kΩ

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply voltage

Input voltage

−50

−40 to +10

Collector current

Output current

Ic(max) ^∗1

−100

−50

°C

∗2

Power dissipation

Junction temperature

150

Tstg

150

Storage temperature

−55 to +150

°C

∗1 Characteristics of built-in transistor

∗2 Each terminal mounted on a recommended land

www.rohm.com

2009.07 - Rev.B

1/2

12 3

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