Datasheet > DTA114-EE

DTA114-EE

更新时间： 2024-09-17 12:56:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
2页	117K
描述
PNP Digital Transistor

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中文翻译

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数据手册

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DTA114-EE 数据手册

DTA114 EM/EE/EUA/ECA/ESA

PNP Digital Transistor

Small Signal Diode

Features

Built-in bias resistors enable the configuration of

an inverter circuit without connecting external input

resistor (see equivalent circuit).

TheThe bias resistors consist of thin -film

resistors with complete isolation to allow negative

biasing of the input.They also have the advantage

of almost completel yeliminating parasitic effects.

Only the on/off conditions need to be set for

operation,marking device design easy.

 Green compound (Halogen free) with suffix "G"

on packing code and prefix "G" on date code.

SOT-723/SOT-523

SOT-323/SOT-23

Ordering Information

1.IN

2.GND

Part No.

DTA114 EM

DTA114 EE

DTA114 EUA

DTA114 ECA

DTA114 ESA

Package

SOT-723

SOT-523

SOT-323

SOT-23

Packing Marking

3.OUT

8K / 7" Reel

3K / 7" Reel

TO-92S

1.GND

2.OUT

3.IN

TO-92S

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Value

EUA ECA

200

-50

Type Number

Power Dissipation

Symbol

Units

ESA

300

V_CC

V_IN

100 150

Supply Voltage

Input Voltage

-40～10

-50

I_O

Output Current

°C

I_C(MAX)

TJ, T_STG

PeakCollectoCurrent

Junction and Storage Temperature Range

-100

-55 to + 150

Notes:1. Valid provided that electrodes are kept at ambient temperature

Parameter

Symbol Min Typ

Max

Condtion

Unit

V_CC=-5V,I_O=-100μA

V_O=-0.3V,I_O=-10mA

I_O/I_I=-10mA/-5mA

V_I(on)

-3

Input Voltage

V_I(off)

-0.5

Output Voltage

V_O(on)

-0.3

-0.88

-0.5

V_I=-5V

Input Current

I_I

V_CC=-50V,V_I=0

Output Current

I_O（off)

μA

V_O=-5V,I_O=-5mA

DC Current Gain

Input Resistance

G_I

R₁

KΩ

Resistance Ratio

R₂/R₁

f_T

0.8

1.2

V_O=-10V,I_O=-5mA,f=100MHz

Transition Frequency

250

MHz

Version:B12

中文翻译

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