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DTA114ECA PDF预览

DTA114ECA

更新时间: 2024-11-07 06:54:47
品牌 Logo 应用领域
RECTRON 晶体小信号双极晶体管
页数 文件大小 规格书
3页 311K
描述
SOT-23 DIGITAL TRANSISTOR TRANSISTORS(PNP)

DTA114ECA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.12Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

DTA114ECA 数据手册

 浏览型号DTA114ECA的Datasheet PDF文件第2页浏览型号DTA114ECA的Datasheet PDF文件第3页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
DTA114ECA  
SOT-23 DIGITAL TRANSISTOR  
TRANSISTORS(PNP)  
FEATURES  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.(see equi-  
valent circuit).  
*
The bias resistors conisit of thin-film resistors with co-  
mplete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely El-  
iminating parasitic effects.  
*
SOT-23  
Only the on/off conditions need to be set for operation mark-  
ing device design easy.  
*
0.055(1.40)  
0.047(1.20)  
MECHANICAL DATA  
* Case: Molded plastic  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.004(0.10)  
0.000(0.00)  
f
0.022(0.55)  
* Weight: 0.008 gram  
0.100(2.55)  
0.089(2.25)  
0.020(0.50)  
0.012(0.30)  
(1)  
(2)  
0.079(2.00)  
0.071(1.80)  
0.118(3.00)  
0.110(2.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25OC ambient temperature unless otherwise specified.  
(3)  
(2)  
(1)  
(1) IN  
(2) GND  
(3) OUT  
Dimensions in inches and (millimeters)  
(3)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
LIMITS  
-50  
UNITS  
V
V
CC  
Supply voltage  
Input voltage  
V
-40~10  
V
IN  
I
-50  
-100  
200  
150  
O
mA  
Output current  
IC(MAX)  
Pd  
Power dissipation  
mW  
oC  
Junction temperature  
Tj  
oC  
Storage temperature  
Tstg  
-55 ~150  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN  
-
TYP  
-
MAX  
-0.5  
UNITS  
V
Input voltage (V = -5V, I = -100µA)  
V
I(off)  
CC  
O
Input voltage (VO= -0.3V, I = -10mA)  
O
V
-3  
-
-
-
-
-
I(on)  
V
Output voltage (IO / II= -10mA / -0.5mA)  
-0.3  
-0.88  
V
o(on)  
Input current (V = -5V)  
I
I
I
-
mA  
Output current (V = -50V,V = 0)  
I
-
-
-
-0.5  
-
µA  
CC  
I
o(off)  
DC current gain (V = -5V,I = -5mA)  
G
I
30  
-
O
O
R
1
Input resistance  
Resistance ratio  
7
10  
1
13  
KΩ  
-
R
R
1
0.8  
1.2  
2 /  
Transistion frequency (V = -10V,I = 5mA, f= 100MHz)  
fT  
-
250  
-
MHz  
2006-3  
CE  
E
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".  

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