5秒后页面跳转
DTA114EE PDF预览

DTA114EE

更新时间: 2024-11-08 17:32:35
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
3页 311K
描述
Package / Case : SOT-523;Mounting Style : SMD/SMT;Power Rating : 0.15 W;Transistor Polarity : PNP;VCEO : 50 V

DTA114EE 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.57
Is Samacsys:NBase Number Matches:1

DTA114EE 数据手册

 浏览型号DTA114EE的Datasheet PDF文件第2页浏览型号DTA114EE的Datasheet PDF文件第3页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
DTA114EUA  
SOT-323 DIGITAL TRANSISTOR  
TRANSISTORS(PNP)  
FEATURES  
Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors.(see equi-  
valent circuit).  
*
The bias resistors conisit of thin-film resistors with co-  
mplete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely El-  
iminating parasitic effects.  
*
SOT-323  
Only the on/off conditions need to be set for operation mark-  
ing device design easy.  
*
0.053(1.35)  
0.045(1.15)  
MECHANICAL DATA  
* Case: Molded plastic  
0.006(0.15)  
0.003(0.08)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.043(1.10)  
0.035(0.90)  
0.004(0.10)  
0.000(0.00)  
REF 0.021(0.53)  
* Weight: 0.006 gram  
0.096(2.45)  
0.085(2.15)  
0.016(0.40)  
0.008(0.20)  
1
2
0.055(1.40)  
0.047(1.20)  
0.087(2.20)  
0.079(2.00)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
3
Ratings at 25OC ambient temperature unless otherwise specified.  
(2)  
(1)  
(1) IN  
(2) GND  
(3) OUT  
Dimensions in inches and (millimeters)  
(3)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
LIMITS  
-50  
UNITS  
V
V
CC  
Supply voltage  
Input voltage  
V
-40~10  
V
IN  
I
-50  
-100  
200  
150  
O
mA  
Output current  
IC(MAX)  
Pd  
Power dissipation  
mW  
oC  
Junction temperature  
Tj  
oC  
Storage temperature  
Tstg  
-55 ~150  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
SYMBOL  
MIN  
-
TYP  
-
MAX  
-0.5  
UNITS  
V
Input voltage (V = -5V, I = -100µA)  
V
I(off)  
CC  
O
Input voltage (VO= -0.3V, I = -10mA)  
O
V
-3  
-
-
-
-
-
I(on)  
V
Output voltage (IO / II= -10mA / -0.5mA)  
-0.3  
-0.88  
V
o(on)  
Input current (V = -5V)  
I
I
I
-
mA  
Output current (V = -50V,V = 0)  
I
-
-
-
-0.5  
-
µA  
CC  
I
o(off)  
DC current gain (V = -5V,I = -5mA)  
G
I
30  
-
O
O
R
1
Input resistance  
Resistance ratio  
7
10  
1
13  
KΩ  
-
R
R
1
0.8  
1.2  
2 /  
Transistion frequency (V = -10V,I = 5mA, f= 100MHz)  
fT  
-
250  
-
MHz  
2006-3  
CE  
E
Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".  

与DTA114EE相关器件

型号 品牌 获取价格 描述 数据表
DTA114-EE TSC

获取价格

PNP Digital Transistor
DTA114EE_09 ROHM

获取价格

100mA / 50V Digital transistors (with built-in resistors)
DTA114EE3 ROHM

获取价格

DTA114EE3 is a digital transistor suitable for inverter, interface and driver applications
DTA114EE3 (新产品) ROHM

获取价格

DTA114EE3 is a digital transistor suitable for inverter, interface and driver applications
DTA114EE3HZG (新产品) ROHM

获取价格

DTA114EE3HZG是一款车规级高可靠性数字晶体管。
DTA114EEB ROHM

获取价格

100mA / 50V Digital transistors (with built-in resistors)
DTA114EEB_09 ROHM

获取价格

100mA / 50V Digital transistors (with built-in resistors)
DTA114EEBHZGTL ROHM

获取价格

Small Signal Bipolar Transistor,
DTA114EEBTL ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DTA114EEB-TL ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO