DTA114EE

更新时间： 2024-11-19 17:32:35

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
3页	311K
描述
Package / Case : SOT-523;Mounting Style : SMD/SMT;Power Rating : 0.15 W;Transistor Polarity : PNP;VCEO : 50 V

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DTA114EE 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.57
Is Samacsys：	N	Base Number Matches：	1

DTA114EE 数据手册

RECTRON

TECHNICAL SPECIFICATION

SEMICONDUCTOR

DTA114EUA

SOT-323 DIGITAL TRANSISTOR

TRANSISTORS(PNP)

FEATURES

Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistors.(see equi-

valent circuit).

The bias resistors conisit of thin-film resistors with co-

mplete isolation to allow negative biasing of the input.

They also have the advantage of almost completely El-

iminating parasitic effects.

SOT-323

Only the on/off conditions need to be set for operation mark-

ing device design easy.

0.053(1.35)

0.045(1.15)

MECHANICAL DATA

* Case: Molded plastic

0.006(0.15)

0.003(0.08)

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

REF 0.021(0.53)

* Weight: 0.006 gram

0.096(2.45)

0.085(2.15)

0.016(0.40)

0.008(0.20)

0.055(1.40)

0.047(1.20)

0.087(2.20)

0.079(2.00)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^OC ambient temperature unless otherwise specified.

(2)

(1)

(1) IN

(2) GND

(3) OUT

Dimensions in inches and (millimeters)

(3)

MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )

RATINGS

SYMBOL

LIMITS

-50

UNITS

Supply voltage

Input voltage

-40~10

-50

-100

200

150

Output current

IC(MAX)

Power dissipation

^oC

Junction temperature

^oC

Storage temperature

Tstg

-55 ~150

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

SYMBOL

MIN

TYP

MAX

-0.5

UNITS

Input voltage (V = -5V, I = -100µA)

I(off)

Input voltage (VO= -0.3V, I = -10mA)

-3

I(on)

Output voltage (I_{O /}I_I= -10mA / -0.5mA)

-0.3

-0.88

o(on)

Input current (V = -5V)

Output current (V = -50V,V = 0)

-0.5

µA

o(off)

DC current gain (V = -5V,I = -5mA)

Input resistance

Resistance ratio

KΩ

0.8

1.2

2 /

Transistion frequency (V = -10V,I = 5mA, f= 100MHz)

f_T

250

MHz

2006-3

Note: "Fully ROHS compliant", "100% Sn plating (Pb-free)".

12 3

中文翻译

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与DTA114EE相关器件

型号	品牌	获取价格	描述	数据表
DTA114-EE	TSC	获取价格	PNP Digital Transistor
DTA114EE_09	ROHM	获取价格	100mA / 50V Digital transistors (with built-in resistors)
DTA114EE3	ROHM	获取价格	DTA114EE3 is a digital transistor suitable for inverter, interface and driver applications
DTA114EE3 (新产品)	ROHM	获取价格	DTA114EE3 is a digital transistor suitable for inverter, interface and driver applications
DTA114EE3HZG (新产品)	ROHM	获取价格	DTA114EE3HZG是一款车规级高可靠性数字晶体管。
DTA114EEB	ROHM	获取价格	100mA / 50V Digital transistors (with built-in resistors)
DTA114EEB_09	ROHM	获取价格	100mA / 50V Digital transistors (with built-in resistors)
DTA114EEBHZGTL	ROHM	获取价格	Small Signal Bipolar Transistor,
DTA114EEBTL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
DTA114EEB-TL	ROHM	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO

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