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DTA114-ECA PDF预览

DTA114-ECA

更新时间: 2024-11-18 12:56:07
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
2页 117K
描述
PNP Digital Transistor

DTA114-ECA 数据手册

 浏览型号DTA114-ECA的Datasheet PDF文件第2页 
DTA114 EM/EE/EUA/ECA/ESA  
PNP Digital Transistor  
Small Signal Diode  
Features  
Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external input  
resistor (see equivalent circuit).  
TheThe bias resistors consist of thin -film  
resistors with complete isolation to allow negative  
biasing of the input.They also have the advantage  
of almost completel yeliminating parasitic effects.  
Only the on/off conditions need to be set for  
operation,marking device design easy.  
Green compound (Halogen free) with suffix "G"  
on packing code and prefix "G" on date code.  
3
SOT-723/SOT-523  
SOT-323/SOT-23  
1
Ordering Information  
1.IN  
2.GND  
2
Part No.  
DTA114 EM  
DTA114 EE  
DTA114 EUA  
DTA114 ECA  
DTA114 ESA  
Package  
SOT-723  
SOT-523  
SOT-323  
SOT-23  
Packing Marking  
3.OUT  
8K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
14  
14  
14  
14  
TO-92S  
1.GND  
2.OUT  
3.IN  
TO-92S  
1
2
3
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
EUA ECA  
200  
-50  
Type Number  
Power Dissipation  
Symbol  
Units  
EM  
ESA  
300  
EE  
PD  
VCC  
VIN  
100 150  
mW  
V
Supply Voltage  
Input Voltage  
-4010  
-50  
V
IO  
Output Current  
mA  
°C  
IC(MAX)  
TJ, TSTG  
PeakCollectoCurrent  
Junction and Storage Temperature Range  
-100  
-55 to + 150  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Parameter  
Symbol Min Typ  
Max  
Condtion  
Unit  
VCC=-5V,IO=-100μA  
VO=-0.3V,IO=-10mA  
IO/II=-10mA/-5mA  
VI(on)  
-3  
Input Voltage  
VI(off)  
-0.5  
V
V
Output Voltage  
VO(on)  
-0.3  
-0.88  
-0.5  
VI=-5V  
Input Current  
II  
mA  
VCC=-50V,VI=0  
Output Current  
IOoff)  
μA  
VO=-5V,IO=-5mA  
DC Current Gain  
Input Resistance  
GI  
30  
7
R1  
10  
13  
KΩ  
Resistance Ratio  
R2/R1  
fT  
0.8  
1
1.2  
VO=-10V,IO=-5mA,f=100MHz  
Transition Frequency  
250  
MHz  
Version:B12  

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