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DSA8003-R

更新时间： 2024-11-05 20:40:15
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
4页 498K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, MT-2-A1-B, 3 PIN

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DSA8003-R 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.79最大集电极电流 (IC)：1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：120JESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：120 MHz
Base Number Matches：1

DSA8003-R 数据手册

 浏览型号DSA8003-R的Datasheet PDF文件第2页浏览型号DSA8003-R的Datasheet PDF文件第3页浏览型号DSA8003-R的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA8003  
Silicon PNP epitaxial planar type  
For low frequency output amplification  
DSA7003 in MT-2 through hole type package  
Package  
ꢀCode  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
MT-2-A2-B  
ꢀPin Name  
1. Emitter  
2. Collector  
3. Base  
Packaging  
Radial type : 2000 pcs / carton  
Absolute Maximum Ratings Ta = 25°C  
Marking Symbol: 4A  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
–60  
–50  
V
–5  
V
–1  
–1.5  
A
Peak collector current  
ICP  
A
Collector power dissipation *  
Junction temperature  
PC  
1
W
°C  
°C  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness  
*
of 1.7 mm for the collector portion  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–60  
–50  
–5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
VCB = –20 V, IE = 0  
– 0.1  
340  
mA  
2
*
hFE1  
VCE = –10 V, IC = –500 mA  
VCE = –5 V, IC = –1A  
120  
50  
1
Forward current transfer ratio *  
hFE2  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –500 mA, IB = –50 mA  
VBE(sat) IC = –500 mA, IB = –50 mA  
– 0.4  
–1.2  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
120  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
14.5  
30  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
120 to 340  
4A  
hFE1  
120 to 240  
4AR  
170 to 340  
4AS  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: November 2011  
Ver. AED  
1
1234

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