5秒后页面跳转
捷配首页

Datasheet > DSA8003S0A
DSA8003S0A PDF预览

DSA8003S0A

更新时间： 2024-09-30 21:15:15
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
4页 509K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, MT-2-A2-B, 3 PIN

阅读下载

中文翻译

获取价格

DSA8003S0A 技术参数

生命周期：Obsolete包装说明：IN-LINE, R-PSIP-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.8最大集电极电流 (IC)：1 A
集电极-发射极最大电压：50 V配置：SINGLE
最小直流电流增益 (hFE)：170JESD-30 代码：R-PSIP-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE极性/信道类型：NPN
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：170 MHz
Base Number Matches：1

DSA8003S0A 数据手册

 浏览型号DSA8003S0A的Datasheet PDF文件第2页浏览型号DSA8003S0A的Datasheet PDF文件第3页浏览型号DSA8003S0A的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA8003  
Silicon PNP epitaxial planar type  
For low frequency output amplification  
DSA7003 in MT-2 through hole type package  
Package  
ꢀCode  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, mount area reduction  
Eco-friendly Halogen-free package  
MT-2-A2-B  
ꢀPin Name  
1. Emitter  
. Collector  
se  
Packaging  
Radial type : 2000 pcs / carton  
Absolute Maximum Ratings Ta = 25°C  
ing Symbol: 4A  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VBO  
IC  
Rating  
Unit  
V
–50  
V
–5  
V
–1  
–1.5  
A
Peak collector current  
ICP  
A
Collector power dissipation
Junction temperature  
PC  
1
W
°C  
°C  
150  
Storage temperatre  
–55 to +150  
Note) : Pned circu: Copper foil rea of 1 cmomore, and the board thickness  
*
of .7 m focollector portion  
Electrical Characteristics T= 25°C±3°C  
Par  
Symbol  
Conditions  
Min  
–60  
–50  
–5  
Typ  
Max  
Unit  
V
Collector-base vopen)  
Collector-emitter voltopen)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –2 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
VCB = –20 V, IE = 0  
– 0.1  
340  
mA  
2
*
hFE1  
VCE = –10 V, IC = –500 mA  
VCE = –5 V, IC = –1A  
120  
50  
1
Forward current transfer ratio *  
hFE2  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –500 mA, IB = –50 mA  
VBE(sat) IC = –500 mA, IB = –50 mA  
– 0.4  
–1.2  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
120  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
14.5  
30  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Code  
Rank  
R
R
S
S
0
No-rank  
120 to 340  
4A  
hFE1  
120 to 240  
4AR  
170 to 340  
4AS  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: November 2011  
Ver. AED  
1
1234

中文翻译

下载PDF

与DSA8003S0A相关器件

型号 品牌 获取价格 描述 数据表
DSA8004 PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
DSA800400A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F
DSA8004-R PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
DSA8004R0A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F
DSA8004-S PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMP
DSA8004S0A PANASONIC

获取价格

 		Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN F
DSA80-12F IXYS

获取价格

 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 110A, 1200V V(RRM), Silicon,
DSA80-14F IXYS

获取价格

 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 110A, 1400V V(RRM), Silicon,
DSA80-16F IXYS

获取价格

 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 110A, 1600V V(RRM), Silicon,
DSA80-18F IXYS

获取价格

 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 110A, 1800V V(RRM), Silicon,

与DSA8003S0A相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证