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DSA7U01

更新时间： 2024-09-30 20:58:11
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 509K
描述
Small Signal Bipolar Transistor, 0.5A I(C), PNP, HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, 3 PIN

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中文翻译

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DSA7U01 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：compliant
风险等级：5.73最大集电极电流 (IC)：0.5 A
配置：Single最小直流电流增益 (hFE)：90
JESD-30 代码：R-PSSO-F3端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

DSA7U01 数据手册

 浏览型号DSA7U01的Datasheet PDF文件第2页浏览型号DSA7U01的Datasheet PDF文件第3页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DSA7U01  
Silicon PNP epitaxial planar type  
For Low-frequency amplifier  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
MiniP3-F2-B  
Package dimension clicks here.→  
Click!  
Packaging  
ꢀPin Name  
1. Base  
DSA7U01×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)  
2. Collector  
3. Emitter  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–100  
–100  
–5  
Unit  
V
Marking Symbol: 4H  
V
V
– 0.5  
–1  
A
Peak collector current  
ICP  
A
Collector power dissipation *  
Junction temperature  
PC  
1
W
°C  
°C  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness  
*
of 1.7 mm for the collector portion  
Absolute maximum rating without heat sink for PC is 0.5 W  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–100  
–5  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
VCEO IC = –100 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
2
*
hFE1  
hFE2  
VCE = –10 V, IC = –150 mA  
VCE = –5 V, IC = –500 mA  
90  
220  
1
Forward current transfer ratio *  
50  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –500 mA, IB = –50 mA  
VBE(sat) IC = –500 mA, IB = –50 mA  
– 0.2  
– 0.9  
120  
– 0.6  
–1.2  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
30  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Code  
Rank  
Q
Q
R
R
0
No-rank  
90 to 220  
4H  
hFE1  
90 to 155  
4HQ  
130 to 220  
4HR  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: May 2012  
Ver. CED  
1
123

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