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DSA7U01R0L PDF预览

DSA7U01R0L

更新时间： 2024-09-30 19:18:43
品牌 Logo 应用领域
松下 - PANASONIC 放大器晶体管
页数 文件大小 规格书
4页 837K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PIN

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中文翻译

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DSA7U01R0L 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：8.39
外壳连接：COLLECTOR最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：100 V配置：SINGLE
最小直流电流增益 (hFE)：130JEDEC-95代码：TO-243AA
JESD-30 代码：R-PSSO-F3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：1 W
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：120 MHz
Base Number Matches：1

DSA7U01R0L 数据手册

 浏览型号DSA7U01R0L的Datasheet PDF文件第2页浏览型号DSA7U01R0L的Datasheet PDF文件第3页浏览型号DSA7U01R0L的Datasheet PDF文件第4页 
DSA7U01  
Silicon PNP epitaxial planar type  
For Low-frequency amplifier  
Unit: mm  
Features  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: 4H  
Packaging  
DSA7U01×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–100  
Unit  
V
1: Base  
–100  
V
2: Collector  
3: Emitter  
Panasonic  
JEITA  
–5  
V
MiniP3-F2-B  
– 0.5  
A
SC-62  
Peak collector current  
ICP  
–1  
A
Code  
TO-243  
1
Collector power dissipation *  
PC  
1
W
°C  
°C  
°C  
Junction temperature  
Tj  
150  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
T
stg  
–55 to +150  
Note) 1: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness  
*
of 1.7 mm for the collector portion  
Absolute maximum rating without heat sink for PC is 0.5 W  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–100  
–5  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
VCEO IC = –100 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
2
*
hFE1  
hFE2  
VCE = –10 V, IC = –150 mA  
VCE = –5 V, IC = –500 mA  
90  
220  
1
Forward current transfer ratio *  
50  
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –500 mA, IB = –50 mA  
VBE(sat) IC = –500 mA, IB = –50 mA  
– 0.2  
– 0.9  
120  
– 0.6  
–1.2  
V
V
1
Base-emitter saturation voltage *  
Transition frequency  
fT  
VCE = –10 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
30  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classification  
*
Code  
Rank  
Q
Q
R
R
0
No-rank  
90 to 220  
4H  
hFE1  
90 to 155  
4HQ  
130 to 220  
4HR  
Marking Symbol  
Product of no-rank is not classified and have no marking symbol for rank.  
Publication date: February 2014  
Ver. EED  
1
1234

中文翻译

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