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DSA7504Q0L PDF预览

DSA7504Q0L

更新时间: 2024-11-05 12:55:27
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
3页 317K
描述
Silicon PNP epitaxial planar type

DSA7504Q0L 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, MINIP3-F2-B, TO-243, SC-62, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.8
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

DSA7504Q0L 数据手册

 浏览型号DSA7504Q0L的Datasheet PDF文件第2页浏览型号DSA7504Q0L的Datasheet PDF文件第3页 
DSA7504  
Silicon PNP epitaxial planar type  
For low frequency amplication  
Features  
Package  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Code  
MiniP3-F2-B  
Package dimension clicks here.  
Click!  
Packaging  
Pin Name  
1. Base  
DSA7504×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)  
2. Collector  
3. Emitter  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Marking Symbol: 4F  
–30  
–20  
V
–7  
V
–4  
A
Peak collector current  
ICP  
–7  
A
Collector power dissipation *  
Junction temperature  
PC  
1
W
°C  
°C  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
Note) : Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness  
*
of 1.7 mm for the collector portion  
Absolute maximum rating without heat sink for PC is 0.5 W  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–30  
–20  
–7  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –1 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
IEBO  
hFE  
VCB = –30 V, IE = 0  
VEB = –7 V, IC = 0  
VCE = –2 V, IC = –2A  
– 0.1  
– 0.1  
315  
mA  
1, 2  
Forward current transfer ratio *  
120  
V
1
Collector-emitter saturation voltage *  
VCE(sat) IC = –3A, IB = – 0.1A  
– 0.7  
180  
–1.0  
Transition frequency  
fT  
VCE = –6 V, IC = –50 mA  
MHz  
Collector output capacitance  
Cob  
VCB = –20 V, IE = 0, f = 1 MHz  
30  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Pulse measurement  
*
2: Rank classication  
*
Code  
Rank  
Q
Q
R
R
0
No-rank  
120 to 315  
4F  
hFE  
120 to 205  
4FQ  
180 to 315  
4FR  
Marking Symbol  
Product of no-rank is not classied and have no marking symbol for rank.  
Publication date: May 2012  
Ver. BED  
1

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