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DSA30C60PB PDF预览

DSA30C60PB

更新时间: 2024-11-18 12:52:19
品牌 Logo 应用领域
IXYS 肖特基二极管
页数 文件大小 规格书
2页 113K
描述
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

DSA30C60PB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:4.31
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:130 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:85 W认证状态:Not Qualified
最大重复峰值反向电压:60 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DSA30C60PB 数据手册

 浏览型号DSA30C60PB的Datasheet PDF文件第2页 
DSA 30 C 60PB  
tentative  
VRRM  
=
60 V  
15 A  
Schottky  
IFAV = 2x  
High Performance Schottky Diode  
Low Loss and Soft Recovery  
Common Cathode  
VF = 0.68 V  
Part number  
DSA 30 C 60PB  
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Very low Vf  
Extremely low switching losses  
Low Irm-values  
Improved thermal behaviour  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
TO-220AB  
Industry standard outline  
Epoxy meets UL 94V-0  
RoHS compliant  
Low noise switching  
Low losses  
R a t i n g s  
Unit  
Symbol  
VRRM  
Definition  
Conditions  
min.  
typ.  
max.  
max. repetitive reverse voltage  
=
=
25 °C  
25 °C  
60  
V
TVJ  
reverse current  
forward voltage  
IR  
VR = 60 V  
VR = 60 V  
0.5  
5
TVJ  
TVJ  
mA  
mA  
= 125 °C  
IF  
IF  
=
=
15 A  
30 A  
0.85  
0.95  
VF  
V
V
TVJ  
TVJ  
=
=
25°C  
IF  
IF  
=
=
15 A  
30 A  
0.68  
0.78  
V
V
125  
°C  
average forward current  
threshold voltage  
IFAV  
rectangular, d = 0.5  
TC = 150 °C  
TVJ = 175 °C  
15  
A
V
V
0.44  
11.2  
F0  
for power loss calculation only  
slope resistance  
r F  
m
Ω
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
RthJC  
TVJ  
1.75  
175  
85  
K/W  
°C  
-55  
Ptot  
=
25 °C  
W
TC  
max. forward surge current  
junction capacitance  
IFSM  
CJ  
tp = 10 ms (50 Hz), sine  
VR = tbdV; f = 1 MHz  
TVJ  
TVJ  
TVJ  
=
=
=
45 °C  
25°C  
25 °C  
130  
A
pF  
mJ  
A
tbd  
non-repetitive avalanche energy  
repetitive avalanche current  
EAS  
IAR  
IAS  
=
1A; L = 100 µH  
f = 10 kHz  
0.05  
0.1  
V = 1.5·V typ.;  
A
R
IXYS reserves the right to change limits, conditions and dimensi  
Data according to IEC 60747and per diode unless otherwise specified  
© 2006 IXYS all rights reserved  

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