Datasheet > DMT8012LFG

DMT8012LFG

更新时间： 2024-11-09 01:00:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	277K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMT8012LFG 数据手册

DMT8012LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

Product Summary

•

Low R_DS(ON)– ensures on state losses are minimized

I_Dmax

T_C= +25°C

35A

V_(BR)DSS

R_DS(ON)max

Excellent Q_{gd x}R_DS(ON)Product (FOM)

Advanced Technology for DC/DC converts

Small form factor thermally efficient package enables higher

density end products

16mΩ @ V_GS= 10V

22mΩ @ V_GS= 6V

80V

30A

•

Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

100% UIS (Avalanche) rated

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

•

Synchronous Rectifier

Backlighting

Mechanical Data

•

Power Management Functions

DC-DC Converters

Case: POWERDI^®3333-8

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208 e3

Weight: 0.008 grams (approximate)

•

Pin 1

Top View

Bottom View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMT8012LFG-7

DMT8012LFG-13

Case

Packaging

2,000/Tape & Reel

3,000/Tape & Reel

POWERDI3333-8

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

SG8 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 13 = 2013)

WW = Week code (01 ~ 53)

SG8

1 of 6

www.diodes.com

July 2014

DMT8012LFG

Document number: DS36606 Rev. 3 - 2

12 3 4 5 6

中文翻译

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与DMT8012LFG相关器件

型号	品牌	获取价格	描述	数据表
DMT8012LFG_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LFG-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LFG-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LK3	DIODES	获取价格	80V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LK3-13	DIODES	获取价格	Power Field-Effect Transistor,
DMT8012LPS	DIODES	获取价格	80V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LPS_17	DIODES	获取价格	80V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LPS-13	DIODES	获取价格	80V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LSS	DIODES	获取价格	80V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT8012LSS-13	DIODES	获取价格	Power Field-Effect Transistor,

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