Datasheet > DMT80N85-TU

DMT80N85-TU

更新时间： 2024-11-19 01:23:11

品牌	Logo	应用领域
迪一电子 - DYELEC		/
页数	文件大小	规格书
7页	1658K
描述
85V N-Channel Power MOSFET

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DMT80N85-TU 数据手册

DMT80N85

85V N-Channel Power MOSFET

R_DS(ON)<8.5mΩ @ V_GS=10V

●

PRODUCT SUMMARY

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Special designed for convertors and power controls

Good stability and uniformity with high EAS

Excellent package for good heat dissipation

Green molding compound

R_DS(on)(mΩ)

V_DS(V)

I_D(A)

8.5 @ V_GS=10V

●

Pin Definition:

●

1. Gate

2. Drain

3. Source

Application

●

Power switching application

Hard switched and High frequency circuits

Uninterruptible power supply

●

Block Diagram

●

Case: TO-220 Package

Ordering Information

Package

Part No.

Packing

DMT80N85-TU

TO-220

50pcs / Tube

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

±20

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

320

Maximum Power Dissipation

170

P_D

Peak diode recovery voltage

dv/dt

V/ns

W/℃

℃

Derating factor

1.13

620

Single pulse avalanche energy (Note 5)

Operating Junction and Storage Temperature Range

E_AS

-55 To 175

T_J,T_STG

1 / 7

May.2015-REV.00

www.dyelec.com

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