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DMT9FK01 PDF预览

DMT9FK01

更新时间: 2024-11-18 12:50:03
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
6页 603K
描述
Silicon epitaxial planar type

DMT9FK01 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-F5
元件数量:1端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.125 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DMT9FK01 数据手册

 浏览型号DMT9FK01的Datasheet PDF文件第2页浏览型号DMT9FK01的Datasheet PDF文件第3页浏览型号DMT9FK01的Datasheet PDF文件第4页浏览型号DMT9FK01的Datasheet PDF文件第5页浏览型号DMT9FK01的Datasheet PDF文件第6页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMT9FK01  
Silicon epitaxial planar type (Diode)  
Silicon PNP epitaxial planar type (Tr)  
For high speed switching circuits  
For digital circuits  
Features  
Package  
Two elements incorporated into one package (SBD + Tr)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
Code  
SSMini5-F4-B  
Pin Name  
1:Anode  
4: Collector  
5: Cathode  
Basic Part Number  
2: Base  
3: Emitter  
DRAQA44E + DB2S311 (Individual)  
Marking Symbol: X2  
Internal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)  
(K)  
5
(C)  
4
Absolute Maximum Ratings T = 25°C  
a
Parameter  
Reverse voltage  
Symbol  
VR  
Rating  
30  
Unit  
V
R1  
Di  
Tr  
Repetitive peak reverse voltage  
Diode Forward current (Average)  
Peak forward current  
VRRM  
IF(AV)  
IFM  
30  
V
R2  
200  
mA  
mA  
A
1
2
3
(A)  
(B)  
(E)  
300  
Non-repetitivepeak forwardsurgecurrent*  
Collector-base voltage (Emitter open)  
IFSM  
VCBO  
VCEO  
IC  
1
Resistance  
value  
R1  
R2  
47  
47  
kΩ  
kΩ  
–50  
V
Tr  
Collector-emitter voltage (Base open)  
Collector current  
–50  
V
–100  
125  
mA  
mW  
°C  
°C  
Total power dissipation *  
PT  
Overall Junction temperature  
Storage temperature  
Tj  
125  
T
stg  
–55 to +150  
Note) : 50 Hz sine wave 1 cycle (Non-repetitive peak current)  
*
Publication date: September 2010  
Ver. AED  
1

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