5秒后页面跳转
DMT8012LSS-13 PDF预览

DMT8012LSS-13

更新时间: 2024-11-21 20:07:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
7页 472K
描述
Power Field-Effect Transistor,

DMT8012LSS-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:,
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:23 weeks风险等级:1.71
JESD-609代码:e3峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DMT8012LSS-13 数据手册

 浏览型号DMT8012LSS-13的Datasheet PDF文件第2页浏览型号DMT8012LSS-13的Datasheet PDF文件第3页浏览型号DMT8012LSS-13的Datasheet PDF文件第4页浏览型号DMT8012LSS-13的Datasheet PDF文件第5页浏览型号DMT8012LSS-13的Datasheet PDF文件第6页浏览型号DMT8012LSS-13的Datasheet PDF文件第7页 
DMT8012LSS  
80V N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
100% Unclamped Inductive Switch (UIS) Test in Production  
High Conversion Efficiency  
ID Max  
BVDSS  
RDS(ON) Max  
TA = +25°C  
Low RDS(ON) Minimizes On-State Losses  
Low Input Capacitance  
16.5mΩ @ VGS = 10V  
20mΩ @ VGS = 4.5V  
9.7A  
8.8A  
80V  
Fast Switching Speed  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description and Applications  
Mechanical Data  
This new generation N-Channel Enhancement Mode MOSFET is  
designed to minimize RDS(ON) yet maintain superior switching  
performance. This device is ideal for use in:  
Case: SO-8  
,
Case Material: Molded Plastic, "Green" Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Finish Matte Tin Annealed over Copper Leadframe.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.074 grams (Approximate)  
Notebook Battery Power Management  
Loadswitches  
Backlighting  
Power Management Functions  
DC-DC Converters  
D
S
S
S
G
D
SO-8  
D
G
D
D
S
Top View  
Internal Schematic  
Equivalent Circuit  
Top View  
Ordering Information (Note 4)  
Part Number  
Case  
Packaging  
DMT8012LSS-13  
SO-8  
2,500/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
8
5
= Manufacturer’s Marking  
T8012LS = Product Type Marking Code  
YYWW = Date Code Marking  
YY or YY = Year (ex: 16 = 2016)  
WW = Week (01 to 53)  
T8012LS  
YY WW  
1
4
1 of 7  
www.diodes.com  
May 2016  
© Diodes Incorporated  
DMT8012LSS  
Document number: DS38164 Rev. 3 - 2  

与DMT8012LSS-13相关器件

型号 品牌 获取价格 描述 数据表
DMT8030LFDF DIODES

获取价格

80V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT80600S080W ETC

获取价格

8.0”, 800×600 dots, M600 Core, 65K colors TFT
DMT80N85 DYELEC

获取价格

85V N-Channel Power MOSFET
DMT80N85-TU DYELEC

获取价格

85V N-Channel Power MOSFET
DMT-8-15 BEL

获取价格

Split Bobbin Power Transformer, 100VA, ROHS COMPLIANT
DMT9FK01 PANASONIC

获取价格

Silicon epitaxial planar type
DMT9FK010R PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN
DMT-A-2-XX ADAM-TECH

获取价格

2
DMT-A5-C-F-T-R ADAM-TECH

获取价格

Tin
DMT-B-2-XX ADAM-TECH

获取价格

2