DMN62D0LFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
ID
V(BR)DSS
RDS(ON)
TA = 25°C
100mA
50mA
2Ω @ VGS = 4V
60V
2.5Ω @ VGS = 2.5V
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
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Case: X1-DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
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DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
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Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Gate
S
D
Gate
G
Protection
Diode
Source
Bottom View
Top View
Pin-Out
Equivalent Circuit
ESD PROTECTED
Ordering Information (Note 3)
Product
DMN62D0LFB-7
DMN62D0LFB-7B
Marking
NK
NK
Reel size (inches)
Tape width (mm)
Quantity per reel
3,000
7
7
8
8
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN62D0LFB-7
DMN62D0LFB-7B
NK
NK
NK = Product Type Marking Code
Top View
Top View
Dot Denotes Drain Side
Bar Denotes Gate and Source Side
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www.diodes.com
October 2011
© Diodes Incorporated
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2