5秒后页面跳转
DMN62D0LFD_17 PDF预览

DMN62D0LFD_17

更新时间: 2024-11-22 01:07:23
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 442K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

DMN62D0LFD_17 数据手册

 浏览型号DMN62D0LFD_17的Datasheet PDF文件第2页浏览型号DMN62D0LFD_17的Datasheet PDF文件第3页浏览型号DMN62D0LFD_17的Datasheet PDF文件第4页浏览型号DMN62D0LFD_17的Datasheet PDF文件第5页浏览型号DMN62D0LFD_17的Datasheet PDF文件第6页 
NOT RECOMMENDED FOR NEW DESIGN  
USE DMN62D1LFD  
DMN62D0LFD  
N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low On-Resistance  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
ID  
BVDSS  
RDS(ON) Max  
TA = +25°C  
310mA  
295mA  
2Ω @ VGS = 4V  
60V  
ESD Protected  
2.5Ω @ VGS = 2.5V  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description  
This new generation MOSFET has been designed to minimize the on-  
state resistance (RDS(ON) and yet maintain superior switching  
)
performance, making it ideal for high efficiency power management  
applications.  
Mechanical Data  
Case: X1-DFN1212-3  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Applications  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: NiPdAu over Copper leadframe. Solderable per MIL-  
DC-DC Converters  
Power Management Functions  
Battery Operated Systems and Solid-State Relays  
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  
Memories, Transistors, etc.  
e4  
STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.005 grams (Approximate)  
Drain  
G pin  
S
Body  
Diode  
D
Gate  
G
Gate  
Protection  
Diode  
ESD PROTECTED  
Bottom View  
Top View  
Source  
Pin-Out Top View  
Equivalent Circuit  
Ordering Information (Note 4)  
Part Number  
DMN62D0LFD-7  
DMN62D0LFD-13  
Compliance  
Standard  
Standard  
Case  
X1-DFN1212-3  
X1-DFN1212-3  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
K63 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: E = 2017)  
K63  
YM  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2007  
2008  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
2016  
2017  
Code  
U
V
W
X
Y
Z
A
B
C
D
E
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
September 2017  
© Diodes Incorporated  
DMN62D0LFD  
Document number: DS36359 Rev. 3 - 3  

与DMN62D0LFD_17相关器件

型号 品牌 获取价格 描述 数据表
DMN62D0LFD-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0LFD-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0SFD DIODES

获取价格

Low On-Resistance
DMN62D0SFD_15 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U_16 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UDW DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UDW_16 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET