Datasheet > DMN62D0UDW_16

DMN62D0UDW_16

更新时间： 2024-11-22 01:08:11

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	545K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN62D0UDW_16 数据手册

DMN62D0UDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Dual N-Channel MOSFET

Low On-Resistance

I_Dmax

T_A= +25°C

BV_DSS

R_DS(ON)max

Low Gate Threshold Voltage

2Ω @ V_GS= 4.5V

Low Input Capacitance

Fast Switching Speed

60V

350mA

2.5Ω @ V_GS= 2.5V

Low Input/Output Leakage

Ultra-Small Surface Mount Package

ESD Protected Gate

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data

Applications



Case: SOT363



Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Motor Control

Power Management Functions



Weight: 0.006 grams (Approximate)

SOT363

D₂

G₁

S₁

ESD Protected Gate

Gate Protection

Diode

Gate Protection

Diode

S₂

G₂

D₁

Top View

Q2 N-Channel

Q1 N-Channel

Top View

Pin out

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN62D0UDW-7

DMN62D0UDW-13

Case

SOT363

Packaging

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

LEE = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: D = 2016)

M = Month (ex: 9 = September)

Date Code Key

Year

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

2026

2027

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

August 2016

DMN62D0UDW

Document number: DS38029 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMN62D0UDW_16相关器件

型号	品牌	获取价格	描述	数据表
DMN62D0UDW-13	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UDW-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UDWQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UW_16	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UW-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0UW-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFB	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN62D0UDW_16相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

29
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

21
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

50
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

48

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN62D0UDW_16

DMN62D0UDW_16 数据手册

与DMN62D0UDW_16相关器件

与DMN62D0UDW_16相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN62D0UDW_16

DMN62D0UDW_16 数据手册

与DMN62D0UDW_16相关器件

与DMN62D0UDW_16相关文章

您还可以找

您在本页遇到什么问题？