Datasheet > DMN62D1LFB

DMN62D1LFB

更新时间： 2024-11-22 14:54:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	710K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN62D1LFB 数据手册

DMN62D1LFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_D

BV_DSS

R_DS(ON)

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

407mA

364mA

2Ω @ V_GS= 4V

Low Input/Output Leakage

60V

2.5Ω @ V_GS= 2.5V

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

Description and Applications



Case: X1-DFN1006-3

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)) yet maintain superior switching performance,

which makes it ideal for high-efficiency power management

applications.

Case Material: Molded Plastic, "Green" Molding Compound;

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: FinishNiPdAu over Copper Leadframe.



Solderable per MIL-STD-202, Method 208

Weight: 0.001 grams (Approximate)



DC-DC Converters



Power Management Functions

Battery Operated Systems and Solid-State Relays

X1-DFN1006-3

Gate Protection

Diode

ESD PROTECTED

Bottom View

Top View

Pin-Out

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN62D1LFB-7B

Marking

Reel Size (inches)

Tape Width (mm)

Quantity Per Reel

10,000

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

NQ = Part Marking Code

Top View

Bar Denotes Gate and Source Side

DMN62D1LFB-7B

1 of 6

www.diodes.com

May 2018

DMN62D1LFB

Document number: DS40517 Rev. 3 - 2

12 3 4 5 6

中文翻译

下载PDF

与DMN62D1LFB相关器件

型号	品牌	获取价格	描述	数据表
DMN62D1LFD	DIODES	获取价格	Low On-Resistance
DMN62D1LFD_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFD_17	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFD-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFD-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFDQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1SFB	DIODES	获取价格	Low Gate Threshold Voltage
DMN62D1SFB_15	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1SFB-7B	DIODES	获取价格	Low Gate Threshold Voltage
DMN62D2U	DIODES	获取价格	60V N-Channel Enhancement Mode MOSFET