Datasheet > DMN62D1LFD

DMN62D1LFD

更新时间： 2024-11-26 01:02:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	366K
描述
Low On-Resistance

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中文翻译

获取价格

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DMN62D1LFD 数据手册

DMN62D1LFD

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

I_D

V_(BR)DSS

R_DS(ON)

Low Input Capacitance

T_A= +25°C

400mA

2Ω @ V_GS= 4V

Fast Switching Speed

60V

350mA

2.5Ω @ V_GS= 2.5V

Low Input/Output Leakage

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(ON)and yet maintain superior switching

)

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

DC-DC Converters

•

Case: X1-DFN1212-3

Power Management Functions

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: NiPdAu over Copper leadframe. Solderable per MIL-

STD-202, Method 208

•

Terminal Connections: See Diagram

Weight: 0.005 grams (approximate)

G pin

Gate Protection

Diode

ESD PROTECTED

Bottom View

Top View

Pin-Out Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN62D1LFD-7

DMN62D1LFD-13

Compliance

Standard

Case

X1-DFN1212-3

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

K64 = Product Type Marking Code

K63 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: B = 2014)

M = Month (ex: 9 = September)

K63

K64

Date Code Key

Year

2013

2014

2015

2016

2017

2018

2019

2020

2010

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

July 2014

DMN62D1LFD

Document number: DS36359 Rev. 1 - 2

12 3 4 5 6

中文翻译

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与DMN62D1LFD相关器件

型号	品牌	获取价格	描述	数据表
DMN62D1LFD_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFD_17	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFD-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFD-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1LFDQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1SFB	DIODES	获取价格	Low Gate Threshold Voltage
DMN62D1SFB_15	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D1SFB-7B	DIODES	获取价格	Low Gate Threshold Voltage
DMN62D2U	DIODES	获取价格	60V N-Channel Enhancement Mode MOSFET
DMN62D2UDM	DIODES	获取价格	60V Dual N-Channel Enhancement Mode MOSFET

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