Datasheet > DMN62D2UWQ

DMN62D2UWQ

更新时间： 2024-11-26 14:54:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	705K
描述
60V N-Channel Enhancement Mode MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN62D2UWQ 数据手册

DMN62D2UWQ

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits



Low On-Resistance

I_DMax

T_A= +25°C

BV_DSS

R_DS(ON)Max

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

391mA

368mA

310mA

2.0Ω @ V_GS= 5.0V

2.5Ω @ V_GS= 2.5V

4.0Ω @ V_GS= 1.8V

60V

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

The DMN62D2UWQ is suitable for automotive applications

requiring specific change control; this part is AEC-Q101

qualified, PPAP capable, and manufactured in IATF 16949

certified facilities.

Description and Applications

This MOSFET is designed to meet the stringent requirements of

automotive applications. It is qualified to AEC-Q101, supported by a

PPAP and is ideal for use in:

https://www.diodes.com/quality/product-definitions/

Mechanical Data



Motor controls

Power-management functions

Backlighting



Package: SOT323

Package Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – Matte Tin Annealed over Alloy 42 Leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.006 grams (Approximate)



SOT323

ESD PROTECTED

Gate Protection

Diode

Top View

Equivalent Circuit

Top View

Ordering Information (Note 4)

Packing

Part Number

Package

Qty.

3,000

10,000

Carrier

DMN62D2UWQ-7

DMN62D2UWQ-13

SOT323

Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and

Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

2D2 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: K = 2023)

M = Month (ex: 9 = September)

Date Code Key

Year

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

2032

2033

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 7

www.diodes.com

May 2023

DMN62D2UWQ

Document number: DS44899 Rev. 2 - 2

12 3 4 5 6 7

中文翻译

下载PDF

与DMN62D2UWQ相关器件

型号	品牌	获取价格	描述	数据表
DMN62D4LDW	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D4LFB	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1L-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1L-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LDW	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LDW-13	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LDW-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN63D1LV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN62D2UWQ相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN62D2UWQ

DMN62D2UWQ 数据手册

与DMN62D2UWQ相关器件

与DMN62D2UWQ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN62D2UWQ

DMN62D2UWQ 数据手册

与DMN62D2UWQ相关器件

与DMN62D2UWQ相关文章

您还可以找

您在本页遇到什么问题？