Datasheet > DMN63D1LDW

DMN63D1LDW

更新时间： 2024-09-27 01:11:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	537K
描述
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN63D1LDW 数据手册

DMN63D1LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Dual N-Channel MOSFET

Low On-Resistance

I_Dmax

T_A= +25°C

V_(BR)DSS

R_DS(ON)max

Low Gate Threshold Voltage

2Ω @ V_GS= 10V

3Ω @ V_GS= 5V

Low Input Capacitance

Fast Switching Speed

60V

250mA

Low Input/Output Leakage

Ultra-Small Surface Mount Package

ESD Protected Gate

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

This MOSFET is designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data



Case: SOT363

Applications

Case Material: Molded Plastic. “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram



Motor Control

Power Management Functions



Weight: 0.006 grams (Approximate)

SOT363

D₂

G₁

S₁

ESD Protected Gate

Gate Protection

Diode

Gate Protection

Diode

S₂

G₂

D₁

Q2 N-Channel

Q1 N-Channel

Top View

Pin out

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN63D1LDW-7

DMN63D1LDW-13

Case

SOT363

Packaging

3000/Tape & Reel

10000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds..

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

D₂

G₁

S₁

1D3 = Product Type Marking Code

YM = Date Code Marking

Y or Y = Year (ex: B = 2014)

M = Month (ex: 9 = September)

1D3 YM

Y M 3 D 1

S₂

G₂

D₁

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

2021

2022

2023

2024

2025

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

July 2015

DMN63D1LDW

Document number: DS38033 Rev. 1 - 2

12 3 4 5 6

中文翻译

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与DMN63D1LDW相关器件

型号	品牌	获取价格	描述	数据表
DMN63D1LDW-13	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LDW-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN63D1LV	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LVQ	DIODES	获取价格	Dual N-Channel Enhancement Mode MOSFET
DMN63D1LW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LW-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LW-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8L	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8L-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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