DMN65D8LDW
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Dual N-Channel MOSFET
ID
V(BR)DSS
RDS(ON)
Package
TA = +25°C
170mA
200mA
Low On-Resistance
8Ω @ VGS = 5V
6Ω @ VGS = 10V
Low Gate Threshold Voltage
60V
SOT363
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Description
ESD Protected Gate, 1KV (HBM)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications
Case: SOT363
DC-DC Converters
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
D2
G1
S1
SOT363
S2
G2
D1
ESD PROTECTED TO 1kV
Top View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMN65D8LDW-7
Case
SOT363
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
MM1= Product Type Marking Code
MM1 YM
M Y 1 M M
MM1 YM
M Y 1 M M
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
2018
Code
U
V
W
X
Y
Z
A
B
C
D
E
F
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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www.diodes.com
February 2015
© Diodes Incorporated
DMN65D8LDW
Document number: DS35500 Rev. 8 - 2