5秒后页面跳转
DMN63D1LT PDF预览

DMN63D1LT

更新时间: 2024-11-22 14:54:43
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
6页 414K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN63D1LT 数据手册

 浏览型号DMN63D1LT的Datasheet PDF文件第2页浏览型号DMN63D1LT的Datasheet PDF文件第3页浏览型号DMN63D1LT的Datasheet PDF文件第4页浏览型号DMN63D1LT的Datasheet PDF文件第5页浏览型号DMN63D1LT的Datasheet PDF文件第6页 
DMN63D1LT  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Product Summary  
Features  
Low On-Resistance: RDS(ON)  
ID Max  
BVDSS  
RDS(ON) Max  
TA = +25°C  
Low Gate Threshold Voltage  
320mA  
260mA  
2Ω @ VGS = 10V  
3Ω @ VGS = 5V  
Low Input Capacitance  
60V  
Fast Switching Speed  
Low Input/Output Leakage  
ESD Protected Gate  
Description  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
This MOSFET is designed to minimize the on-state resistance  
(RDS(ON)) and yet maintain superior switching performance, making  
it ideal for high efficiency power management applications.  
Mechanical Data  
Applications  
Case: SOT-523  
Motor Control  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Power Management Functions  
Terminals: Finish  
Matte Tin Annealed over Alloy 42  
Leadframe. Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Weight: 0.002 grams (Approximate)  
SOT-523  
D
D
G
G
S
ESD protected Gate  
Gate Protection  
Diode  
Top View  
S
Top View  
Equivalent Circuit  
Pin Out Configuration  
Ordering Information (Note 4)  
Part Number  
DMN63D1LT-7  
DMN63D1LT-13  
Case  
SOT-523  
SOT-523  
Packaging  
3000/Tape & Reel  
10000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
63D = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: C = 2015)  
63D  
YM  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2014  
2015  
2016  
2017  
2018  
2019  
2020  
2021  
Code  
B
C
D
E
F
G
H
I
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
November 2015  
© Diodes Incorporated  
DMN63D1LT  
Document number: DS37551 Rev. 2 - 2  

与DMN63D1LT相关器件

型号 品牌 获取价格 描述 数据表
DMN63D1LV DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LVQ DIODES

获取价格

Dual N-Channel Enhancement Mode MOSFET
DMN63D1LW DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LW-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D1LW-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8L DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8L-13 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8L-7 DIODES

获取价格

N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8LDW DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN63D8LDW_15 DIODES

获取价格

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET