Datasheet > DMN65D8LDW

DMN65D8LDW

更新时间： 2024-09-27 01:13:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	535K
描述
Dual N-Channel MOSFET

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DMN65D8LDW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Dual N-Channel MOSFET

I_D

V_(BR)DSS

R_DS(ON)

Package

T_A= +25°C

170mA

200mA

Low On-Resistance

8Ω @ V_GS= 5V

6Ω @ V_GS= 10V

Low Gate Threshold Voltage

60V

SOT363

Low Input Capacitance

Fast Switching Speed

Small Surface Mount Package

Description

ESD Protected Gate, 1KV (HBM)

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)and yet maintain superior switching

)

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

Applications



Case: SOT363



DC-DC Converters

Case Material: Molded Plastic; UL Flammability Classification

Rating 94V-0

Power Management Functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.



Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish Annealed over Alloy 42

Leadframe).



Terminal Connections: See Diagram

Weight: 0.006 grams (Approximate)

D₂

G₁

S₁

SOT363

S₂

G₂

D₁

ESD PROTECTED TO 1kV

Top View

Internal Schematic

Top View

Ordering Information (Note 4)

Part Number

DMN65D8LDW-7

Case

SOT363

Packaging

3,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

MM1= Product Type Marking Code

MM1 YM

M Y 1 M M

MM1 YM

M Y 1 M M

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y = Year (ex: A = 2013)

M = Month (ex: 9 = September)

Date Code Key

Year

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

2018

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

February 2015

DMN65D8LDW

Document number: DS35500 Rev. 8 - 2

12 3 4 5 6

中文翻译

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与DMN65D8LDW相关器件

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DMN65D8LDW_15	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LDW-7	DIODES	获取价格	Dual N-Channel MOSFET
DMN65D8LDWQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LFB	DIODES	获取价格	N-Channel MOSFET
DMN65D8LFB_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
DMN65D8LFB-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
DMN65D8LFB-7B	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
DMN65D8LQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LQ-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LQ-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

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