Datasheet > DMN66D0LDW

DMN66D0LDW

更新时间： 2024-11-14 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	176K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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DMN66D0LDW 数据手册

DMN66D0LDW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Features

Mechanical Data

•

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Small Surface Mount Package

ESD Protected Gate, 1KV (HBM)

Lead Free/RoHS Compliant (Note 2)

Qualified to AEC-Q101 Standards for High Reliability

•

Case: SOT-363

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

•

SOT-363

D₂

G₁

S₁

S₂

G₂

D₁

ESD PROTECTED, 1KV

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage (Note 1)

Drain Current (Note 1)

Continuous

±20

115

V_GSS

Continuous

Continuous @ 100°C

Pulsed

I_D

800

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Symbol

P_D

R_θ

Value

250

1.6

Units

mW/°C

Total Power Dissipation

Derating above T_A= 25°C (Note 1)

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

500

°C/W

°C

T_j,T_STG

-55 to +150

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 3)

Symbol

Min

Typ Max Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

⎯

BV_DSS

I_DSS

⎯

1.0

500

_GS= 0V, I_D= 10μA

@ T_C

@ T_C= 125°C

= 25°C

µA

V_DS= 60V, V_GS= 0V

Gate-Body Leakage

±5

I_GSS

μA V_GS= ±20V, V_DS= 0V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.2

⎯

2.0

V_GS(th)

R_{DS (ON)}

g_FS

⎯

3.5

3.0

V_DS= V_GS, I_D= 250μA

V_GS= 5.0V, I_D= 0.115A

V_GS= 10V, I_D= 0.115A

Static Drain-Source On-Resistance

@ T_j= 25°C

@ T_j= 125°C

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

_DS= 10V, I_D= 0.115A

3.4

1.4

C_iss

C_oss

C_rss

⎯

Output Capacitance

_DS= 25V, V_GS= 0V, f = 1.0MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_D(OFF)

⎯

V_DD= 30V, I_D= 0.115A, R_L= 150Ω,

Turn-Off Delay Time

ns V_GEN= 10V_,R_GEN= 25Ω

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

February 2008

DMN66D0LDW

Document number: DS31232 Rev. 4 - 2

12 3 4

中文翻译

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