Datasheet > DMN65D8LQ

DMN65D8LQ

更新时间： 2024-11-15 01:11:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	461K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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DMN65D8LQ 数据手册

DMN65D8LQ

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features



Low On-Resistance

I_D

Package

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low Gate Threshold Voltage

Low Input Capacitance

310mA

270mA

3Ω @ V_GS= 10V

4Ω @ V_GS= 5V

60V

SOT23

Fast Switching Speed

Small Surface Mount Package

ESD Protected Gate

Description

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)

This new generation MOSFET is designed to minimize the on-state

resistance (R_DS(ON)), yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

Applications

Mechanical Data



DC-DC Converters



Case: SOT23

Power Management Functions

Case Material: Molded Plastic.

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating - Matte Tin Finish Annealed over Alloy 42

Leadframe).



Weight: 0.006 grams (Approximate)

SOT23

Drain

Gate

Protection

Diode

Source

ESD PROTECTED TO 1kV

Top View

Pin Configuration

Equivalent Circuit

Ordering Information (Note 5)

Part Number

DMN65D8LQ-7

DMN65D8LQ-13

Case

SOT23

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

1 of 8

www.diodes.com

September 2015

DMN65D8LQ

Document number: DS38179 Rev. 1 - 2

12 3 4 5 6 7 8

中文翻译

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与DMN65D8LQ相关器件

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DMN65D8LQ-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LQ-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN65D8LW-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN66D0LDW	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN66D0LDW-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN66D0LDWQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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