Datasheet > DMN62D0LFD

DMN62D0LFD

更新时间： 2024-11-22 01:02:55

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	333K
描述
Low On-Resistance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN62D0LFD 数据手册

DMN62D0LFD

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low On-Resistance

I_D

V_(BR)DSS

R_DS(ON)

T_A= +25°C

Low Input Capacitance

Fast Switching Speed

310mA

295mA

2Ω @ V_GS= 4V

60V

Low Input/Output Leakage

2.5Ω @ V_GS= 2.5V

ESD Protected

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R_DS(ON)and yet maintain superior switching

)

performance, making it ideal for high efficiency power management

applications.

Mechanical Data

•

Case: X1-DFN1212-3

Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

Applications

•

DC-DC Converters

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: NiPdAu over Copper leadframe. Solderable per MIL-

STD-202, Method 208 e4

Power management functions

Battery Operated Systems and Solid-State Relays

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

•

Terminal Connections: See Diagram

Weight: 0.005 grams (approximate)

Drain

Body

Diode

G pin

Gate

Protection

Source

Diode

ESD PROTECTED

Bottom View

Top View

Pin-Out Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number

DMN62D0LFD-7

DMN62D0LFD-13

Compliance

Standard

Case

X1-DFN1212-3

Packaging

3,000/Tape & Reel

10,000/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

K63 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2013)

K63

M = Month (ex: 9 = September)

Date Code Key

Year

2007

2008

2009

2010

2011

2012

2013

2014

2015

2016

2017

Code

Month

Code

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

1 of 6

www.diodes.com

May 2014

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

12 3 4 5 6

中文翻译

下载PDF

与DMN62D0LFD相关器件

型号	品牌	获取价格	描述	数据表
DMN62D0LFD_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0LFD_17	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0LFD-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0LFD-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0SFD	DIODES	获取价格	Low On-Resistance
DMN62D0SFD_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U_16	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U-13	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN62D0U-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN62D0LFD相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

30
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

49

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN62D0LFD

DMN62D0LFD 数据手册

与DMN62D0LFD相关器件

与DMN62D0LFD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMN62D0LFD

DMN62D0LFD 数据手册

与DMN62D0LFD相关器件

与DMN62D0LFD相关文章

您还可以找

您在本页遇到什么问题？