Datasheet > DMN601VK_07

DMN601VK_07

更新时间： 2024-11-26 09:54:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	287K
描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

数据手册

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DMN601VK_07 数据手册

DMN601VK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Mechanical Data

•

Dual N-Channel MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Ultra-Small Surface Mount Package

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Up To 2kV

"Green" Device (Note 4)

•

Case: SOT-563

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminal Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

•

SOT-563

D₂

G₁

S₁

ESD Protected up to 2kV

TOP VIEW

S₂

G₂

D₁

TOP VIEW

Internal Schematic

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±20

V_GSS

Continuous

Pulsed (Note 3)

305

800

Drain Current (Note 1)

I_D

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

Value

250

Units

°C/W

°C

P_d

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

500

R_θ

-65 to +150

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Symbol Min

Typ Max Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

⎯

BV_DSS

I_DSS

⎯

250

V_GS= 0V, I_D= 10μA

V_DS= 50V, V_GS= 0V

V_GS= ±10V, V_DS= 0V

V_GS= ±5V, V_DS= 0V

±500

±100

Gate-Source Leakage

I_GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

1.6

2.5

V_GS(th)

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 0.5A

⎯

2.0

3.0

Static Drain-Source On-Resistance

R_{DS (ON)}

⎯

V_GS= 4.5V, I_D= 200mA

V_DS=10V, I_D= 0.2A

V_GS= 0V, I_S= 115mA

Forward Transfer Admittance

Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

284

|Y_fs|

V_SD

⎯

0.5

⎯

1.4

⎯

5.0

C_iss

C_oss

C_rss

⎯

V_DS= 25V, V_GS= 0V

f = 1.0MHz

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 4

www.diodes.com

October 2007

DMN601VK

Document number: DS30655 Rev. 4 - 2

12 3 4

中文翻译

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与DMN601VK_07相关器件

型号	品牌	获取价格	描述	数据表
DMN601VK-7	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601WK	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601WK_09	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN601WK-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN601WKQ	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN601WKQ-7	DIODES	获取价格	Small Signal Field-Effect Transistor,
DMN6022SSD	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6022SSS	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6040SE	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6040SFDE	DIODES	获取价格	Low On-Resistance

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