Datasheet > DMN601WK_09

DMN601WK_09

更新时间： 2024-11-26 09:54:15

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
5页	144K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMN601WK_09 数据手册

DMN601WK

N-CHANNEL ENHANCEMENT MODE MOSFET

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Features

Mechanical Data

•

Case: SOT-323

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

Terminal Connections: See Diagram

Marking Information: See Page 3

Ordering Information: See Page 3

Weight: 0.006 grams (approximate)

•

Low On-Resistance: R_DS(ON)

Low Gate Threshold Voltage

Low Input Capacitance

•

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Up To 2kV

"Green" Device (Note 4)

•

SOT-323

Drain

Gate

Protection

Diode

Source

TOP VIEW

Pin Out Configuration

TOP VIEW

ESD PROTECTED TO 2kV

EQUIVALENT CIRCUIT

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±20

V_GSS

Continuous

Pulsed (Note 3)

300

800

Drain Current (Note 1)

I_D

Thermal Characteristics @T_A= 25°C unless otherwise specified

Characteristic

Total Power Dissipation (Note 1)

Symbol

P_D

R_θ

Value

200

Units

°C/W

°C

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

625

-65 to +150

T_J,T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 5)

Symbol Min

Typ Max Unit

Test Condition

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

⎯

BV_DSS

I_DSS

I_GSS

⎯

1.0

±10

V_GS= 0V_,I_D= 10μA

μA V_DS= 60V, V_GS= 0V

μA V_{GS =}±20V, V_DS= 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

1.6

2.5

V_GS(th)

V_DS= 10V, I_D= 1mA

V_{GS =}10V, I_D= 0.5A

V_GS= 4.5V, I_D= 0.2A

V_DS= 10V, I_D= 0.2A

⎯

2.0

3.0

Static Drain-Source On-Resistance

R_DS(ON)

|Y_fs|

Forward Transfer Admittance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

⎯

5.0

C_iss

C_oss

C_rss

⎯

V_DS= 25V, V_GS= 0V, f = 1.0MHz

Notes:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Short duration pulse test used to minimize self-heating effect.

1 of 5

www.diodes.com

April 2009

DMN601WK

Document number: DS30653 Rev. 4 - 2

12 3 4 5

中文翻译

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与DMN601WK_09相关器件

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DMN6040SFDE	DIODES	获取价格	Low On-Resistance
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