是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 18 weeks |
风险等级: | 1.59 | Samacsys Confidence: | 4 |
Samacsys Status: | Released | Samacsys PartID: | 316116 |
Samacsys Pin Count: | 3 | Samacsys Part Category: | MOSFET (N-Channel) |
Samacsys Package Category: | Other | Samacsys Footprint Name: | TO252_FFW (2018) |
Samacsys Released Date: | 2018-11-02 18:31:01 | Is Samacsys: | N |
其他特性: | HIGH RELIABILITY | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 42 W | 最大脉冲漏极电流 (IDM): | 30 A |
参考标准: | AEC-Q101 | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMN6040SK3Q | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6040SK3Q-13 | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
DMN6040SSD | DIODES |
获取价格 |
Low Input Capacitance | |
DMN6040SSD_15 | DIODES |
获取价格 |
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6040SSD_16 | DIODES |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6040SSD-13 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
DMN6040SSDQ | DIODES |
获取价格 |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
DMN6040SSDQ-13 | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 5A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-o | |
DMN6040SSS | DIODES |
获取价格 |
Low On-Resistance | |
DMN6040SSS_15 | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE MOSFET |