5秒后页面跳转
DMN6066SSD-13 PDF预览

DMN6066SSD-13

更新时间: 2024-11-09 09:54:15
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
8页 696K
描述
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN6066SSD-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:GREEN, PLASTIC, SOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:1.76
其他特性:HIGH RELIABILITY配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):4.4 A
最大漏极电流 (ID):3.3 A最大漏源导通电阻:0.066 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.14 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON

DMN6066SSD-13 数据手册

 浏览型号DMN6066SSD-13的Datasheet PDF文件第2页浏览型号DMN6066SSD-13的Datasheet PDF文件第3页浏览型号DMN6066SSD-13的Datasheet PDF文件第4页浏览型号DMN6066SSD-13的Datasheet PDF文件第5页浏览型号DMN6066SSD-13的Datasheet PDF文件第6页浏览型号DMN6066SSD-13的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
DMN6066SSD  
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low on-resistance  
ID  
V(BR)DSS  
RDS(on)  
Fast switching speed  
T
A = 25°C  
“Green” component and RoHS compliant (Note 1)  
Qualified to AEC-Q101 Standards for High Reliability  
4.4A  
3.6A  
66mΩ @ VGS= 10V  
97mΩ @ VGS= 4.5V  
60V  
Mechanical Data  
Description and Applications  
This MOSFET has been designed to minimize the on-state resistance  
and yet maintain superior switching performance, making it ideal for  
high efficiency power management applications.  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0 (Note 1)  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals Connections: See diagram below  
Motor control  
Terminals: Finish - Matte Tin annealed over Copper lead frame.  
Solderable per MIL-STD-202, Method 208  
Backlighting  
DC-DC Converters  
Power management functions  
Weight: 0.074 grams (approximate)  
SO-8  
D1  
D2  
S2  
G1  
G2  
S1  
Top View  
Top View  
Equivalent Circuit  
Ordering Information (Note 1)  
Product  
DMN6066SSD-13  
Marking  
N6066SD  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
13  
12  
2,500  
Note:  
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about  
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.  
Marking Information  
= Manufacturer’s Marking  
N6066SD = Product Type Marking Code  
YYWW = Date Code Marking  
YY = Year (ex: 09 = 2009)  
N6066SD  
YY  
WW  
WW = Week (01-53)  
1 of 8  
www.diodes.com  
March 2010  
© Diodes Incorporated  
DMN6066SSD  
Document Number DS32109 Rev 1 - 2  

DMN6066SSD-13 替代型号

型号 品牌 替代类型 描述 数据表
DMN6066SSS-13 DIODES

类似代替

60V N-CHANNEL ENHANCEMENT MODE MOSFET

与DMN6066SSD-13相关器件

型号 品牌 获取价格 描述 数据表
DMN6066SSS DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6066SSS_15 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6066SSS-13 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6066SSSQ-13 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3_10 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3-13 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068LK3Q DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068SE DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMN6068SE_11 DIODES

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET