Datasheet > DMN601WK-7

DMN601WK-7

更新时间： 2024-11-06 23:13:27

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	142K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册
替代型号

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DMN601WK-7 数据手册

DMN601WK

Lead-free Green

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT

TRANSISTOR

Features

•

Low On-Resistance: R_DS(ON)

SOT-323

Low Gate Threshold Voltage

Low Input Capacitance

Dim

Min

0.25

1.15

2.00

Max

0.40

1.35

2.20

Fast Switching Speed

Low Input/Output Leakage

Lead Free By Design/RoHS Compliant (Note 2)

ESD Protected Up To 2kV

"Green" Device (Note 4)

0.65 Nominal

0.30

1.20

1.80

0.0

0.40

1.40

2.20

0.10

1.00

0.40

0.18

8°

Mechanical Data

•

Case: SOT-323

Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

0.90

0.25

0.10

0°

Drain

•

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Finish ⎯ Matte Tin annealed over Alloy 42

leadframe. Solderable per MIL-STD-202, Method 208

All Dimensions in mm

•

Terminal Connections: See Diagram

Marking: See Last Page

Gate

ESD protected up to 2kV

Ordering & Date Code Information: See Last Page

Weight: 0.006 grams (approximate)

Gate

Protection

Diode

Source

EQUIVALENT CIRCUIT

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

V_DSS

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current (Note 1)

V_GSS

300

800

Continuous

Pulsed (Note 3)

I_D

P_d

Total Power Dissipation (Note 1)

200

625

R_θJA

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

°C/W

T_j, T_STG

-65 to +150

°C

Note:

1. Device mounted on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10µS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DS30653 Rev. 2 - 2

1 of 4

DMN601WK

www.diodes.com

12 3 4

中文翻译

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DMN601WK-7 替代型号

型号	品牌	替代类型	描述	数据表
PMF3800SN	NXP	功能相似	N-channel TrenchMOS standard level FET

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