Datasheet > DMN2710UTQ

DMN2710UTQ

更新时间： 2023-12-06 20:10:43

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	558K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMN2710UTQ 数据手册

DMN2710UTQ

1.8

1.6

1.4

1.2

3.0

2.5

2.0

1.5

1.0

0.5

0.0

V_GS= 4.5V

V_GS= 4.0V

V_DS= 5V

V_GS= 1.8V

V_GS= 3.5V

V_GS= 3.0V

V_GS= 2.5V

V_GS= 2.0V

V_GS= 1.5V

0.8

0.6

0.4

0.2

T_J= 150℃

V_GS= 1.3V

V_GS= 1.2V

T_J= 85℃

T_J= 25℃

T_J= 125℃

T_J= -55℃

0.5

1.5

2.5

0.5

1.5

2.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

Figure 1. Typical Output Characteristic

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.6

0.5

0.4

0.3

0.2

0.1

I_D= 350mA

I_D= 600mA

V_GS= 1.8V

V_GS= 2.5V

V_GS= 4.5V

0.5

1.5

2.5

V_GS, GATE-SOURCE VOLTAGE (V)

I_D, DRAIN-SOURCE CURRENT (A)

Figure 4. Typical Transfer Characteristic

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

1.8

1.6

1.4

1.2

0.3

V_GS= 4.5V

V_GS= 4.5V, I_D= 600mA

V_GS= 2.5V, I_D= 500mA

T_J= 150℃

0.25

0.2

0.15

0.1

0.05

T_J= 125℃

T_J= 85℃

T_J= 25℃

T_J= -55℃

V_GS= 1.8V, I_D= 350mA

0.8

0.6

-50 -25

T_J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

75 100 125 150

0.5

1.5

2.5

I_D, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs. Drain Current and

Temperature

3 of 7

www.diodes.com

November 2020

DMN2710UTQ

Document number: DS42756 Rev. 2 - 2

1 234 5 6 7

下载PDF

与DMN2710UTQ相关器件

型号	品牌	描述	获取价格	数据表
DMN2710UV	DIODES	Dual N-Channel Enhancement Mode MOSFET	获取价格
DMN2710UVQ	DIODES	Dual N-Channel Enhancement Mode MOSFET	获取价格
DMN2710UW	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMN2710UWQ	DIODES	N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMN2990UDJ	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMN2990UDJ-7	DIODES	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格