Datasheet > DMN2710UTQ

DMN2710UTQ

更新时间： 2023-12-06 20:10:43

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描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2710UTQ 数据手册

DMN2710UTQ

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

±6

V_GSS

Continuous Drain Current

(Note 6) V_GS= 4.5V

Steady

State

0.87

0.7

= +25°C

= +75°C

I_D

0.65

I_S

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)

5.6

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

P_D

Value

0.32

395

Unit

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Steady State

°C/W

R_JA

0.52

241

P_D

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

°C/W

R_JA

-55 to +150

°C

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS=20V, V_GS= 0V

V_GS= ±4.5V, V_DS= 0V

100

±1.0

μA

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.5

—

1.0

0.45

0.6

Ω

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 4.5V, I_D= 600mA

V_GS= 2.5V, I_D= 500mA

V_GS= 1.8V, I_D= 350mA

V_GS= 0V, I_S= 150mA

0.14

0.17

0.22

0.7

Static Drain-Source On-Resistance

0.75

1.2

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

kΩ

C_iss

C_oss

C_rss

R_g

= 16V, V_GS= 0V

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Gate Resistance

6.5

1.6

0.6

0.1

4.9

3.1

386

174

V_DS= 0V, V_GS= 0V, f = 1.0MHz

Total Gate Charge

Q_g

V_GS= 4.5V, V_DS= 10V,

I_D= 250mA

Gate-Source Charge

Gate-Drain Charge

Q_gs

Q_gd

t_D(ON)

t_R

Turn-On Delay Time

V_DD= 10V, V_GS= 4.5V,

R_L= 47Ω, R_g= 10Ω

I_D= 200mA

Turn-On Rise Time

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

t_RR

Q_RR

I_F= 1.0A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

November 2020

DMN2710UTQ

Document number: DS42756 Rev. 2 - 2

123 4 5 6 7

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