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DMC505010R

更新时间： 2024-11-21 19:54:23
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 728K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PIN

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DMC505010R 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 6 PINReach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.75
风险等级：7.95Samacsys Description：DMC505010R, Dual Dual Bipolar Transistor, NPN 100 mA 50 V HFE:210 150 MHz Power, 6-Pin SMini6 F3 B
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE)：210
JESD-30 代码：R-PDSO-F6元件数量：2
端子数量：6最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：0.15 W
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：150 MHz
Base Number Matches：1

DMC505010R 数据手册

 浏览型号DMC505010R的Datasheet PDF文件第2页浏览型号DMC505010R的Datasheet PDF文件第3页浏览型号DMC505010R的Datasheet PDF文件第4页 
DMC50501  
Silicon NPN epitaxial planar type  
Unit: mm  
For general amplification  
DMC20501 in SMini6 type package  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
ꢀMarking Symbol: B0  
ꢀBasic Part Number  
Dual DSC2001 (Individual)  
1: Emitter (Tr1)  
2: Base (Tr1)  
3: Base (Tr2)  
Panasonic  
JEITA  
4: Collector (Tr2)  
Packaging  
5: Emitter (Tr2)  
6: Collector (Tr1)  
SMini6-F3-B  
SC-113DB  
DMC505010R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
ꢀAbsolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Code  
SOT-363  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
60  
50  
V
(C1) (E2) (C2)  
6
5
4
Tr1  
Tr2  
7
V
100  
mA  
mA  
mW  
°C  
Tr2  
Tr1  
Peak collector current  
ICP  
200  
Total power dissipation  
PT  
150  
1
2
3
(E1) (B1) (B2)  
Junction temperature  
Tj  
150  
Overall  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
°C  
T
stg  
°C  
ꢀElectrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
1
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
VEBO IE = 10 µA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = 20 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = 10 V, IC = 2 mA  
0.1  
100  
460  
µA  
µA  
210  
hFE  
(Small/Large)  
h
FE ratio *  
VCE = 10 V, IC = 2 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 100 mA, IB = 10 mA  
0.13  
150  
0.3  
V
fT  
VCE = 10 V, IC = 2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
1.5  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. 1: Ratio between 2 elements  
*
Publication date: December 2013  
Ver. DED  
1
1234

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DMC505010R 替代型号

型号 品牌 替代类型 描述 数据表
DMC506010R PANASONIC

完全替代

 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN

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