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DMC56200

更新时间： 2024-11-21 19:57:43
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
4页 432K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

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DMC56200 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：unknown
风险等级：5.76最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：160JESD-30 代码：R-PDSO-F5
元件数量：2端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

DMC56200 数据手册

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This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC56200  
Silicon NPN epitaxial planar type  
For digital circuits  
Features  
ꢀPackage  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
ꢀCode  
SMini5-F3-B  
ꢀPin Name  
1: Emitter (Tr1)  
4: Collector (Tr2)  
2: Base (Common) 5: Collector (Tr1)  
3: Emitter (Tr2)  
ꢀBasic Part Number  
Dual DRC2144T (Common base)  
ꢀMarking Symbol: P4  
ꢀInternal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
Tr1  
Tr2  
R1 R1  
50  
V
1
2
3
100  
mA  
mW  
°C  
(E1) (B1) (E2)  
Total power dissipation  
PT  
150  
Resistance value  
R1  
47  
kΩ  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
µA  
µA  
mA  
0.01  
460  
VCE = 10 V, IC = 5 mA  
160  
hFE  
(Small/Large)  
hFE ratio *  
VCE = 10 V, IC = 5 mA  
0.50  
0.99  
47  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
0.25  
V
V
2.8  
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
R1  
0.4  
V
Input resistance  
–30%  
+30%  
kΩ  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: December 2010  
Ver. BED  
1
1234

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