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DMC56600

更新时间: 2024-09-27 21:22:07
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管晶体管
页数 文件大小 规格书
4页 432K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, 6 PIN

DMC56600 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknown风险等级:5.76
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):160
JESD-30 代码:R-PDSO-F6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

DMC56600 数据手册

 浏览型号DMC56600的Datasheet PDF文件第2页浏览型号DMC56600的Datasheet PDF文件第3页浏览型号DMC56600的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC56600  
Silicon NPN epitaxial planar type  
For digital circuits  
Features  
Package  
High forward current transfer ratio hFE with excellent linearity  
Code  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini6-F3-B  
Pin Name  
1: Emitter (Tr1)  
2: Emitter (Tr2)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Base (Tr1)  
Basic Part Number  
6: Collector (Tr1)  
Dual DRC2144T (Individual)  
Marking Symbol: P6  
Packaging  
Internal Connection  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1) (B1) (C2)  
6
5
4
Absolute Maximum Ratings T = 25°C  
a
R1  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
Tr2  
Tr1  
R1  
50  
V
1
2
3
100  
mA  
mW  
°C  
(E1) (E2) (B2)  
Total power dissipation  
PT  
150  
Resistance value  
R1  
47  
kΩ  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
Electrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
µA  
µA  
mA  
V
0.01  
460  
0.25  
VCE = 10 V, IC = 5 mA  
160  
2.8  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
V
Input voltage (OFF)  
VI(off) VCE = 5 V, IC = 100 µA  
R1  
0.4  
V
Input resistance  
–30%  
47  
+30%  
kΩ  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2010  
ZJJ00719AED  
1

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