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DMC56101

更新时间： 2024-11-25 14:50:55
品牌 Logo 应用领域
松下 - PANASONIC 开关光电二极管晶体管
页数 文件大小 规格书
4页 430K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

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DMC56101 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5针数：5
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.75
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：35JESD-30 代码：R-PDSO-F5
元件数量：2端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

DMC56101 数据手册

 浏览型号DMC56101的Datasheet PDF文件第2页浏览型号DMC56101的Datasheet PDF文件第3页浏览型号DMC56101的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC56101  
Silicon NPN epitaxial planar type  
For digital circuits  
DMC26101 in SMini5 type package  
ꢀPackage  
Features  
ꢀCode  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini5-F3-B  
ꢀPin Name  
1: Base (Tr1)  
4: Collector (Tr2)  
2: Emitter (Common) 5: Collector (Tr1)  
3: Base (Tr2)  
ꢀBasic Part Number  
Dual DRC2114E (Common emitter)  
ꢀMarking Symbol: E1  
ꢀInternal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
50  
Unit  
V
Tr1  
Tr2  
R2  
R2  
50  
V
R1  
R1  
100  
mA  
mW  
°C  
1
2
3
(B1) (E) (B2)  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
R1  
10  
10  
kΩ  
kΩ  
Resistance value  
R2  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
50  
Typ  
Max  
Unit  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
V
V
50  
ICBO  
ICEO  
IEBO  
hFE  
VCB = 50 V, IE = 0  
VCE = 50 V, IB = 0  
VEB = 6 V, IC = 0  
0.1  
0.5  
0.5  
µA  
µA  
mA  
VCE = 10 V, IC = 5 mA  
35  
hFE  
(Small/Large)  
hFE ratio *  
VCE = 10 V, IC = 5 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Input voltage (ON)  
VCE(sat) IC = 10 mA, IB = 0.5 mA  
VI(on) VCE = 0.2 V, IC = 5 mA  
0.25  
V
V
2.1  
Input voltage (OFF)  
Input resistance  
VI(off) VCE = 5 V, IC = 100 µA  
0.8  
+30%  
1.2  
V
R1  
–30%  
0.8  
10  
kΩ  
Resistance ratio  
R1 / R2  
1.0  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: December 2010  
Ver. DED  
1
1234

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