DMC506E2

更新时间： 2024-01-25 01:39:16

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	309K
描述
For high-frequency amplification DMC206E2 in SMini6 type package

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中文翻译

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数据手册

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DMC506E2 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

DMC506E2

Silicon NPN epitaxial planar type

For high-frequency ampliﬁcation

DMC206E2 in SMini6 type package

 Features

ꢀPackage

 High transition frequency f_T

ꢀCode

 Contributes to miniaturization of sets, reduction of component count.

 Eco-friendly Halogen-free package

SMini6-F3-B

Package dimension clicks here.→

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ꢀBasic Part Number

ꢀPin Name

Dual DSC2G02 (Individual)

1: Emitter (Tr1)

2: Emitter (Tr2)

3: Base (Tr2)

4: Collector (Tr2)

5: Base (Tr1)

 Packaging

6: Collector (Tr1)

DMC506E20R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

ꢀMarking Symbol: D2

ꢀInternal Connection

ꢀAbsolute Maximum Ratings T = 25°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

Unit

(C1) (B1) (C2)

Tr2

Tr1

°C

Total power dissipation

P_T

150

(E1) (E2) (B2)

Junction temperature

T_j

150

Storage temperature

stg

–55 to +150

ꢀElectrical Characteristics T = 25°C±3°C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Base-emitter voltage

Symbol

Conditions

Min

Typ

Max

Unit

V_CBOI_C= 10 µA, I_E= 0

V_EBOI_E= 10 µA, I_C= 0

V_BE

h_FE

f_T

V_CE= 6 V, I_C= 1 mA

0.72

Forward current transfer ratio

Transition frequency

V_CE= 6 V, I_C= 1 mA

260



V_CE= 6 V, I_C= 1 mA

450

650

0.6

MHz

Reverse transfer capacitance(Common emitter)

Power gain

C_re

V_CE= 6 V, I_C= 1 mA, f = 10.7 MHz

V_CE= 6 V, I_C= 1 mA, f = 100 MHz

Noise ﬁgure

3.3

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: February 2012

Ver. CED

12 3

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