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DMC50201

更新时间： 2024-02-28 03:25:03
品牌 Logo 应用领域
松下 - PANASONIC 光电二极管
页数 文件大小 规格书
4页 459K
描述
Small Signal Bipolar Transistor, 0.1A I(C), NPN, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, 5 PIN

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DMC50201 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.76
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：210
JESD-30 代码：R-PDSO-F5端子数量：5
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

DMC50201 数据手册

 浏览型号DMC50201的Datasheet PDF文件第2页浏览型号DMC50201的Datasheet PDF文件第3页浏览型号DMC50201的Datasheet PDF文件第4页 
This product complies with the RoHS Directive (EU 2002/95/EC).  
DMC50201  
Silicon NPN epitaxial planar type  
For general amplification  
DMC20201 in SMini5 type package  
Features  
ꢀPackage  
High forward current transfer ratio hFE with excellent linearity  
ꢀCode  
Low collector-emitter saturation voltage VCE(sat)  
Contributes to miniaturization of sets, reduction of component count.  
Eco-friendly Halogen-free package  
SMini5-F3-B  
ꢀPin Name  
1: Emitter (Tr1)  
4: Collector (Tr2)  
2: Base (Common) 5: Collector (Tr1)  
3: Emitter (Tr2)  
ꢀBasic Part Number  
Dual DSC2001 (Common base)  
ꢀMarking Symbol: A6  
ꢀInternal Connection  
Packaging  
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  
(C1)  
5
(C2)  
4
ꢀAbsolute Maximum Ratings T = 25°C  
a
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
Tr1  
Tr2  
60  
50  
7
V
1
2
3
V
(E1) (B) (E2)  
100  
mA  
mA  
mW  
°C  
Peak collector current  
ICP  
200  
Total power dissipation  
PT  
150  
Junction temperature  
Tj  
150  
Storage temperature  
T
stg  
–55 to +150  
°C  
ꢀElectrical Characteristics T = 25°C±3°C  
a
Parameter  
Symbol  
Conditions  
Min  
60  
50  
7
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Forward current transfer ratio  
VCBO IC = 10 µA, IE = 0  
VCEO IC = 2 mA, IB = 0  
VEBO IE = 10 µA, IC = 0  
V
V
ICBO  
ICEO  
hFE  
VCB = 20 V, IE = 0  
VCE = 10 V, IB = 0  
VCE = 10 V, IC = 2 mA  
0.1  
100  
460  
µA  
µA  
210  
hFE  
(Small/Large)  
hFE ratio *  
VCE = 10 V, IC = 2 mA  
0.50  
0.99  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = 100 mA, IB = 10 mA  
0.13  
150  
0.3  
V
fT  
VCE = 10 V, IC = 2 mA  
MHz  
Collector output capacitance  
Cob  
VCB = 10 V, IE = 0, f = 1 MHz  
1.5  
pF  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Ratio between 2 elements  
*
Publication date: March 2010  
ZJJ00690AED  
1
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