5秒后页面跳转
DMC3032LSD PDF预览

DMC3032LSD

更新时间: 2024-11-24 09:54:03
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
8页 181K
描述
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

DMC3032LSD 数据手册

 浏览型号DMC3032LSD的Datasheet PDF文件第2页浏览型号DMC3032LSD的Datasheet PDF文件第3页浏览型号DMC3032LSD的Datasheet PDF文件第4页浏览型号DMC3032LSD的Datasheet PDF文件第5页浏览型号DMC3032LSD的Datasheet PDF文件第6页浏览型号DMC3032LSD的Datasheet PDF文件第7页 
DMC3032LSD  
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
Low On-Resistance  
N-Channel: 32m@ 10V  
46m@ 4.5V  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals Connections: See Diagram  
Terminals: Finish - Matte Tin annealed over Copper lead frame.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 6  
Ordering Information: See Page 6  
Weight: 0.072 grams (approximate)  
P-Channel: 39m@ 10V  
53m@ 4.5V  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Complementary Pair MOSFET  
Lead Free/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
SO-8  
D2  
D1  
S2  
D2  
G2  
G1  
G2  
S1  
G1  
D2  
D1  
D1  
S2  
S1  
Top View  
Top View  
N-Channel MOSFET  
P-Channel MOSFET  
Maximum Ratings N-CHANNEL – Q1 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
±20  
V
TA = 25°C  
TA = 85°C  
Steady  
State  
8.1  
5.1  
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 4)  
A
A
ID  
25  
IDM  
Maximum Ratings P-CHANNEL – Q2 @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
-30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
VGSS  
±20  
V
TA = 25°C  
TA = 85°C  
Steady  
State  
-7.0  
-4.5  
Continuous Drain Current (Note 3)  
Pulsed Drain Current (Note 4)  
A
A
ID  
-25  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 3)  
Symbol  
PD  
Value  
2.5  
Unit  
W
Thermal Resistance, Junction to Ambient (Note 3)  
Operating and Storage Temperature Range  
50  
°C/W  
°C  
RθJA  
-55 to +150  
TJ, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.  
4. Repetitive rating, pulse width limited by junction temperature.  
1 of 8  
www.diodes.com  
May 2010  
© Diodes Incorporated  
DMC3032LSD  
Document number: DS32153 Rev. 1 - 2  

与DMC3032LSD相关器件

型号 品牌 获取价格 描述 数据表
DMC3032LSD-13 DIODES

获取价格

Power Field-Effect Transistor, 8.1A I(D), 30V, 0.032ohm, 2-Element, N-Channel and P-Channe
DMC3035LSD DIODES

获取价格

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC3035LSD-13 DIODES

获取价格

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC3036LSD DIODES

获取价格

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC3036LSD-13 DIODES

获取价格

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC3038LVT-7 DIODES

获取价格

Power Field-Effect Transistor
DMC30401 PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, SSSMINI
DMC3060LVT DIODES

获取价格

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
DMC3060LVT-13 DIODES

获取价格

Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 2-Element, N-Channel and P-Channel,
DMC3060LVT-7 DIODES

获取价格

Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 2-Element, N-Channel and P-Channel,