是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | Reach Compliance Code: | compliant |
Factory Lead Time: | 23 weeks | 风险等级: | 5.72 |
配置: | SEPARATE, 2 ELEMENTS | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 3.6 A | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e3 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大功率耗散 (Abs): | 1.16 W | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DMC3060LVTQ | DIODES |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
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Small Signal Field-Effect Transistor, | |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
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COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
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Small Signal Field-Effect Transistor | |
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Small Signal Field-Effect Transistor, | |
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LCD Module Specification |