Datasheet > DF2B6.8SC

DF2B6.8SC

更新时间： 2024-09-18 21:11:39

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网二极管
页数	文件大小	规格书
8页	279K
描述
Protection Diodes against ESD

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中文翻译

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技术参数
数据手册

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DF2B6.8SC 技术参数

生命周期：	Active	包装说明：	R-XBCC-N2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.74
最大击穿电压：	7.8 V	最小击穿电压：	5.8 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	R-XBCC-N2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性：	BIDIRECTIONAL	参考标准：	IEC-61000-4-5
最大重复峰值反向电压：	5 V	表面贴装：	YES
技术：	AVALANCHE	端子形式：	NO LEAD
端子位置：	BOTTOM	Base Number Matches：	1

DF2B6.8SC 数据手册

DF2B6.8SC

ESD Protection Diodes Silicon Epitaxial Planar

DF2B6.8SC

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Packaging and Internal Circuit

1: Pin 1

2: Pin 2

SC2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

VESD

±30

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2013-08-29

Rev.1.0

12 3 4 5 6 7 8

中文翻译

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