Datasheet > DF2B68M2SC

DF2B68M2SC

更新时间： 2024-01-17 15:59:05

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
8页	257K
描述
ESD Protection Diodes Silicon Epitaxial Planar

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数据手册

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DF2B68M2SC 数据手册

DF2B6.8M2SC

ESD Protection Diodes Silicon Epitaxial Planar

DF2B6.8M2SC

1. Applications

•

ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2. Packaging and Internal Circuit

1: Pin 1

2: Pin 2

SC2

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)

Characteristics

Symbol

Rating

Unit

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

VESD

±8

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2012-08-21

Rev.3.0

12 3 4 5 6 7 8

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