Datasheet > DF2B6M4CT

DF2B6M4CT

更新时间： 2024-11-08 14:58:23

品牌	Logo	应用领域
东芝 - TOSHIBA		电视
页数	文件大小	规格书
9页	362K
描述
Bidirectional TVS Diode (ESD Protection Diode), +/-5.5 V, SOD-882(CST2)

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技术参数
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DF2B6M4CT 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.74	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches：	1

DF2B6M4CT 数据手册

DF2B6M4CT

ESD Protection Diodes Silicon Epitaxial Planar

DF2B6M4CT

1. General

The DF2B6M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device

interfaces and other applications to protect against static electricity and noise.

Utilizing snapback characteristics, the DF2B6M4CT provides low dynamic resistance and superior protective

performance.

Furthermore, it is optimum the high speed signal application for the low capacitance performance. The

DF2B6M4CT is housed in an ultra-compact package (1.0 × 0.6 mm) to meet applications that require a small

footprint.

2. Applications

Mobile Equipment

 Smartphones

 Tablets

 Notebook PCs

Desktop PCs

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

3. Features

(1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V)

(2) Protects devices with its high ESD performance.

(VESD = ±20 kV (Contact / Air) @IEC61000-4-2)

(3) Low dynamic resistance protects semiconductor devices from static electricity and noise.

(RDYN = 0.5 Ω (typ.))

(4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.

(VC = 10 V@IPP = 2 A (typ.))

(5) Compact package is suitable for use in high density board layouts such as in mobile devices.

(1.0 × 0.6 mm size (Toshiba package name: CST2))

4. Packaging

CST2

Start of commercial production

2016-12

2017-12-18

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...9

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